TLP251TP1 Toshiba, TLP251TP1 Datasheet

TLP251TP1

Manufacturer Part Number

TLP251TP1

Description

Optocoupler Logic-Out Push-Pull DC-IN 1-CH 8-Pin PDIP T/R

Manufacturer

Toshiba

Datasheet

1.TLP251TP1.pdf (7 pages)

Specifications of TLP251TP1

Package

8PDIP

Input Type

Output Type

Push-Pull

Direction Type

Uni-Directional

Maximum Forward Current

20 mA

Maximum Forward Voltage

1.8 V

Current page: 1 of 7
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Inverter For Air Conditioner

Induction Heating

Transistor Inverter

Power MOS FET Gate Drive

IGBT Gate Drive

The TOSHIBA TLP251 consists of a

integrated photodetector.

This unit is 8-lead DIP package.

TLP251 is suitable for gate driving circuit of IGBT or power MOS FET.

Especially TLP251 is capable of “direct” gate drive of lower power IGBTs.

(~15A)

Truth Table

Input threshold current: I

Supply current (I

Supply voltage (V

Output current (I

Switching time (t

Isolation voltage: 2500Vrms(min.)

UL recognized: UL1577, file no.E67349

Option(D4)

VDE Approved : DIN EN60747-5-2

Maximum Operating Insulation Voltage : 890V

Highest Permissible Over Voltage

(Note):When a EN60747-5-2 approved type is needed,

Input

LED

Please designate “Option(D4)”

Off

pLH

): ±0.4A(max.)

): 11mA(max.)

): 10

Tr1

Off

/ t

pHL

−

35V

TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC

=5mA(max.)

): 1μs(max.)

GaAℓA

Tr2

Off

s light emitting diode and a

TLP251

: 4000V

Schematic

Pin Configuration (top view)

A 0.1μF bypass capcitor must be connected

between pin 8 and 5(see Note 5).

Weight: 0.54 g (typ.)

TOSHIBA

1 : N.C.

2 : Anode

3 : Cathode

4 : N.C.

5 : GND

6 : V

7 : N.C.

8 : V

(Output)

11−10C4

2007-10-01

TLP251

Unit in mm

GND

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TLP251TP1 Summary of contents

Page 1

... TOSHIBA Photocoupler GaAℓAs Ired & Photo-IC Inverter For Air Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive The TOSHIBA TLP251 consists of a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. ...

Page 2

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 3

Recommended Operating Conditions Characteristic Input current, on (Note6) Input voltage, off Supply voltage Peak output current Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an ...

Page 4

Switching Characteristics Characteristic Propagation L→H delay time H→L Output rise time Output fall time Common mode transient immunity at high level output Common mode transient immunity at low level output * All typical values are at Ta=25 ℃ Test Circuit ...

Page 5

Test Circuit pLH, pHL 0.1μF F 100Ω Test Circuit SW: ...

Page 6

I – 100 ° 0.5 0.3 0.1 0.05 0.03 0.01 1.4 1.8 1.0 1.2 1.6 Forward voltage V ( – ...

Page 7

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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