JANTX1N5418US MICROSEMI, JANTX1N5418US Datasheet

JANTX1N5418US

Manufacturer Part Number

JANTX1N5418US

Description

Diode Switching 400V 3A 2-Pin E-MELF

Manufacturer

MICROSEMI

Type

Switching Dioder

Datasheet

1.JANTX1N5418US.pdf (3 pages)

Specifications of JANTX1N5418US

Package

2E-MELF

Peak Forward Voltage

1.5@9A V

Peak Average Forward Current

3@Ta=55C A

Peak Reverse Current

1 uA

Configuration

Single

Peak Non-repetitive Surge Current

80 A

Peak Reverse Recovery Time

150 ns

Peak Reverse Repetitive Voltage

400 V

Current page: 1 of 3
Download datasheet (296Kb)

10-06-2009 REV D, SD59A

IMPORTANT: For the most current data, consult MICROSEMI’s website:

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411

and is ideal for high-reliability applications where a failure cannot be tolerated. These

industry-recognized 3.0 Amp rated rectifiers for working peak reverse voltages from

50 to 600 volts are hermetically sealed with voidless-glass construction using an

internal “Category I” metallurgical bond. These devices are also available in axial-

leaded packages for thru-hole mounting (see separate data sheet for 1N5415 thru

1N5420). Microsemi also offers numerous other rectifier products to meet higher and

lower current ratings with various recovery time speeds.

ELECTRICAL CHARACTERISTICS

•

1N5415US

1N5416US

1N5417US

1N5418US

1N5419US

1N5420US

NOTE 1: From 3.0 Amps at T

linearly to zero at T

ambient is sufficiently controlled where T

NOTE 2: I

TYPE

Surface mount package series equivalent to the

Voidless hermetically sealed glass package

Triple-Layer Passivation

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 50 to 600 Volts.

JAN, JANTX, JANTXV, and JANS available per MIL-

Axial-leaded equivalents also available (see separate

Solder temperatures: 260

JEDEC registered 1N5415 to 1N5420 series

PRF-19500/411

data sheet for 1N5415 thru 1N5420)

Junction Temperature: -65

Storage Temperature: -65

Thermal Resistance: 6.5

Thermal Impedance: 1.5

Average Rectified Forward Current (I

Forward Surge Current (8.3 ms half sine): 80 Amps

= 55ºC and 2 Amps @ T

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

= 0.5A, I

MAXIMUM RATINGS

100V

200V

400V

500V

600V

50V

RWM

S C O T T S D A L E D I V I S I O N

FEATURES

= 175

= 1A, I

BREAKDOWN

C. These ambient ratings are for PC boards where thermal resistance from mounting point to

VOLTAGE

MINIMUM

C/W junction to endcap

C/W @ 10 ms heating time

C for 10 s (maximum)

VOLTS

C to +175

110V

220V

440V

550V

660V

R(REC)

DESCRIPTION

55V

C to +175

@ 50μA

= 55

= 100ºC (see Note 1)

= 0.250A

C, derate linearly at 22 mA/

J(max)

): 3 Amps @

does not exceed 175

VOLTS

MIN.

Scottsdale Division

0.6

Microsemi

FORWARD

VOLTAGE

@ 9 A

VOLTS

MAX.

1.5

SURFACE MOUNT FAST RECOVERY

http://www.microsemi.com

VOIDLESS-HERMETICALLY SEALED

C to 2.0 Amps at T

•

CASE: Hermetically sealed voidless hard glass with

Tungsten slugs

TERMINALS: End caps are Copper with Tin/Lead

(Sn/Pb) finish. Note: Previous inventory had solid

Silver with Tin/Lead (Sn/Pb) finish.

TAPE & REEL option: Standard per EIA-481-B

Tin/Lead (Sn/Pb) finish

Inherently radiation hard as described in Microsemi

1N5415US thru 1N5420US

MARKING: Cathode band only

POLARITY: Cathode indicated by band

WEIGHT:

Fast recovery 3 Amp rectifiers 50 to 600 V

Military and other high-reliability applications

General rectifier applications including bridges, half-

bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Low thermal resistance

Controlled avalanche with peak reverse power

capability

MicroNote 050

See package dimensions and recommended pad

layout on last page

µA

1.0

MECHANICAL AND PACKAGING

MAXIMUM

REVERSE

CURRENT

GLASS RECTIFIERS

APPLICATIONS / BENEFITS

@ V

RWM

100

539 mg

µA

= 100

RECOVERY

MAXIMUM

REVERSE

(NOTE 2)

TIME t

C. Above T

150

250

400

APPEARANCE

Package “E”

or D-5B

AMPS

= 100

3.0

CURRENT I

RECTIFIED

AVERAGE

(NOTE 1)

C, derate

AMPS

Page 1

100

2.0

Related parts for JANTX1N5418US

JANTX1N5418US Summary of contents

Page 1

... I” metallurgical bond. These devices are also available in axial- leaded packages for thru-hole mounting (see separate data sheet for 1N5415 thru 1N5420). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speeds. ...

Page 2

... REV D, SD59A 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5415US thru 1N5420US VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Definition GRAPHS FIGURE 2 – Typical Forward Current vs. Microsemi Scottsdale Division Forward Voltage Page 2 ...

Page 3

... E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5415US thru 1N5420US VOIDLESS-HERMETICALLY SEALED SURFACE MOUNT FAST RECOVERY PACKAGE DIMENSIONS AND LAYOUT mm MAX 5.72 3.76 0.711 --- Microsemi Scottsdale Division GLASS RECTIFIERS PAD LAYOUT INCHES mm A 0.288 7.32 B 0.070 1 ...

Related keywords

JANTX1N5418US datasheet
JANTX1N5418US data sheet
JANTX1N5418US pdf datasheet
JANTX1N5418US component
JANTX1N5418US part
JANTX1N5418US distributor
JANTX1N5418US RoHS
JANTX1N5418US datasheet download