MA4AGSW1 M/A-Com Technology Solutions, MA4AGSW1 Datasheet

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... Polymer Scratch protection  RoHS Compliant* and 260°C Reflow Compatible DESCRIPTION The MA4AGSW1 is an Aluminum-Gallium-Arsenide, single pole, single throw (SPST), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM Technology Solutions patented hetero-junction technology. This technol- ogy produces a switch with less loss than conven- tional GaAs processes ...

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... MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch CONTROL LEVEL (DC CURRENT) PARAMETER INSERTION LOSS @ -5V ISOLATION @ +10mA INPUT RETURN LOSS @ -5V OUTPUT RETURN LOSS @ -5V SWITCHING SPEED ( VOLTAGE ) *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 10 ns rise and fall times ...

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... MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on 0 -0.1 -0.2 -0.3 -0.4 -0.5 0.00 0 -10 -20 -30 -40 -50 -60 0.00 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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... MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Typical RF Performance (Probed on wafer) 0 -10 -20 -30 -40 -50 0.00 0 -10 -20 -30 -40 -50 0.00 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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... SPST Reflective AlGaAs PIN Diode Switch Operation of the MA4AGSW1 Switch The application negative DC voltage to either provides insertion loss for the MA4AGSW1 SPST reflective switch. Isolation is achieved with +10 mA total D.C. current. The forward bias voltage at the diode bias node is typically 1.4 volts for supply currents up to +30 mA and will not exceed 1.6 volts. The backside area of the die is the RF and DC return ground plane. The bias network design should yield > ...

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... MA4AGSW1 SPST Reflective AlGaAs PIN Diode Switch Chip Dimensions and Bonding Pad Locations (In Yellow) DIM Pads X-Y 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. ...

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... Die should primarily be handled with vacuum pickups, or alternatively with plastic tweezers. The MA4AGSW1, AlGaAs switch is designed to be mounted with electrically conductive silver epoxy or with a lower temperature solder perform, which does not have a rich tin content. ...