MA02303GJ-R7 M/A-Com Technology Solutions, MA02303GJ-R7 Datasheet

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MA02303GJ-R7

Manufacturer Part Number
MA02303GJ-R7
Description
RF Amp Chip Single Power Amp 2.5GHz 5.5V 8-Pin MSOP EP T/R
Manufacturer
M/A-Com Technology Solutions
Type
Power Amplifierr
Datasheet

Specifications of MA02303GJ-R7

Package
8MSOP EP
Number Of Channels Per Chip
1
Typical Output Power
26.5@2450MHz dBm
Typical Power Gain
29.5@2450MHz dB
Maximum Input Vswr :1
2
Maximum Operating Frequency Range
>=20000 MHz
Typical Output Intercept Point
43@2451MHz dBm

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MA02303GJ-R7
Manufacturer:
IRC
Quantity:
1 500
RF Power Amplifier IC
for 2.4 GHz ISM
Features
Description
The MA02303GJ is an RF power amplifier based on
M/A-COM’s Self-Aligned MSAG MESFET Process.
This product is designed for use in 2.4 GHz ISM
products.
power “bypass” mode and output power control
Absolute Maximum Ratings
1. Beyond these limits, the device may be damaged or device reliability
Ordering Information
MA02303GJ-R7
MA02303GJ-R13
MA02303GJ-SMB
DC Supply Voltage
RF Input Power
Junction Temperature
Storage Temperature
Operating Temperature
Moisture Sensitivity
reduced. Functional operation at absolute-maximum-rated conditions is
not implied.
Perfect for 802.11B, HOP, SWAP, HOMERF,
Bluetooth, WDECT, MDS, MMDS
Single Positive Supply
Power Added Efficiency As High As 55 Percent
IP
Output Power 26.5 dBm @ 3.3 V
Output Power 28.5 dBm @ 5.0 V
100 Percent Duty Cycle
2200 to 2600 MHz Operation
8 Pin MSOP Full Downset Plastic Package
Operates Over Wide Ranges of Supply Voltage
Self-Aligned MSAG
3
Part Number
= +43 dBm
Rating
For booster applications, it features a low
®
7 inch, 1000 piece reel
13 inch, 3000 piece reel
Sample test board
-Lite MESFET Process
Symbol
T
T
V
P
OPER
T
STG
DD
IN
J
Description
-40 to +150
-40 to +100
Value
150
5.5
10
1
JEDEC Level 1
Unit
mW
°C
°C
°C
V
PIN Configuration
Functional Schematic
Package bottom is electrical and thermal ground
PIN 1
PIN
1
2
3
4
5
6
7
8
V
RF
GND
V
V
GND
RF
V
D1
G2
G3
D2
IN
OUT
Function
/ V
/ V
G1
D3
Drain voltage, first stage
RF input and drain
voltage for first stage
Ground
Gate bias voltage,
second stage
Gate bias voltage,
third stage
Ground
RF output and drain
voltage for third stage
Drain voltage for
second stage
Description
PIN 8

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MA02303GJ-R7 Summary of contents

Page 1

... This product is designed for use in 2.4 GHz ISM products. For booster applications, it features a low power “bypass” mode and output power control Ordering Information Part Number Description MA02303GJ-R7 7 inch, 1000 piece reel MA02303GJ-R13 13 inch, 3000 piece reel MA02303GJ-SMB Sample test board Absolute Maximum Ratings ...

Page 2

... Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information Characteristic = 2450 MHz = 2450 MHz, = 5.5 V, VSWR = 8: dBm 0-5.5 V, Load VSWR = 5:1, DD MA02303GJ = -2 dBm, Duty Cycle = 100 %, IN Symbol Min. Typ. Max. ƒ 2400 2500 P 25.3 26.5 — ...

Page 3

... OUT I 0. (dBm PAE -10 P OUT -15 -20 IRL -25 -30 2400 2500 2600 FREQUENCY (MHz) MA02303GJ Output Power, and Drain Current vs. Input Power for Low Current “Bypass” Mode ( 0.0 V) DD1,2 DD3 3 0.0 V DD1, 2 DD3 2450 MHz 8 PAE 6 P OUT -10 -5 ...

Page 4

... Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information 350 300 250 200 I DD 150 P OUT 100 100 o Temperature MA02303GJ Output Power and Drain Current vs. Temperature +3. dBm 3 2450 MHz 0 - Temperature Maximum Operating Temperature (Ts) to Maintain <150 °C Junction Temperature ...

Page 5

... Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information Full-Downset Paddle To Board Ground Discrete Components MA02303GJ OUT Transmission Line Lengths 0.15" 0.21" 0.11" (Not very critical 0.16" ...

Page 6

... RF Power Amplifier IC for 2.4 GHz ISM Designing with the MA02303GJ The MA02303GJ is built using a near-enhancement mode FET that operates from a single supply voltage. A negative voltage is not required because the FET is designed to operate with a +0V DC gate bias. There is no impedance matching or RF choking on this IC – these functions are supplied externally. This approach offers the highest level of performance, the lowest bill of materials cost, and far fewer components than a discrete de- sign ...

Page 7

... RF Power Amplifier IC for 2.4 GHz ISM Designing with the MA02303GJ (Cont’d) Frequency V Pin 1 DD1 GHz Mag 3.7 0.98115 3.8 0.99055 3.9 0.99468 4.0 0.99541 4.1 0.99675 4.2 0.99695 4.3 0.99709 4.4 0.99625 4.5 0.99600 4.6 0.99528 4.7 0.99356 4.8 0.98985 4 ...

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