IRF7103QTR International Rectifier, IRF7103QTR Datasheet

29C9868

IRF7103QTR

Manufacturer Part Number
IRF7103QTR
Description
29C9868
Manufacturer
International Rectifier
Datasheet
1.IRF7103Q.pdf (10 pages)

Specifications of IRF7103QTR

Transistor Polarity
N Channel
Continuous Drain Current Id
50A
On Resistance Rds(on)
1.5ohm
No. Of Pins
8
Peak Reflow Compatible (260 C)
No
Transconductance
3.4A/V
Current Rating
50A
Rohs Compliant
No
Continuous Drain Current - 25 Deg C
3A
Dc Collector Current
3A

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7103QTRPBF
Manufacturer:
IR
Quantity:
20 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRF7103QTRPBF
Quantity:
4 000
Benefits
Description
Specifically designed for Automotive applications, these
HEXFET
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
Absolute Maximum Ratings
Thermal Resistance
Typical Applications
I
I
I
P
V
E
I
E
dv/dt
T
Symbol
R
R
www.irf.com
D
D
DM
AR
J,
D
GS
AS
AR
@ T
@ T
JL
JA
@T
T
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection
Power Doors, Windows & Seats
Advanced Process Technology
Dual N-Channel MOSFET
Ultra Low On-Resistance
175°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
STG
C
C
C
®
= 25°C
= 70°C
= 25°C
Power MOSFET's in a Dual SO-8 package utilize
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Peak Diode Recovery dv/dt …
Junction and Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
ƒ
AUTOMOTIVE MOSFET
ƒ
GS
GS
@ 4.5V
@ 4.5V
G2
G1
S2
S1
V
50V
DSS
1
2
3
4
Top View
See Fig.16c, 16d, 19, 20
Typ.
–––
–––
R
HEXFET
8
7
6
5
DS(on)
200@V
130@V
-55 to + 175
D1
D1
D2
D2
Max.
± 20
3.0
2.5
2.4
25
16
22
12
max (mW)
GS
GS
®
= 4.5V
Power MOSFET
= 10V
IRF7103Q
Max.
62.5
20
SO-8
3.0A
1.5A
mW/°C
I
Units
Units
D
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
1

Related parts for IRF7103QTR

Image
Part Number
Description
Manufacturer
Datasheet
Request R
IRF7103
Part Number:
IRF7103
Description:
Manufacturer:
International Rectifier
Datasheet:
IRF7103.pdf (9 pages)
IRF710
Part Number:
IRF710
Description:
Manufacturer:
International Rectifier Corp.
80CNQ045
Part Number:
80CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
80CNQ045.pdf (6 pages)
82CNQ030
Part Number:
82CNQ030
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
82CNQ030.pdf (6 pages)
85CNQ015
Part Number:
85CNQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
85CNQ015.pdf (8 pages)
200CNQ035
Part Number:
200CNQ035
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
200CNQ035.pdf (5 pages)
120NQ045
Part Number:
120NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
120NQ035R.pdf (5 pages)
400CNQ045
Part Number:
400CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
400CNQ045.pdf (4 pages)
63CNQ100
Part Number:
63CNQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
63CNQ100.pdf (2 pages)
123NQ080
Part Number:
123NQ080
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
301CNQ045
Part Number:
301CNQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
125NQ015
Part Number:
125NQ015
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
125NQ015.pdf (4 pages)
301CNQ040
Part Number:
301CNQ040
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
301CNQ045.pdf (5 pages)
123NQ100
Part Number:
123NQ100
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
123NQ080.pdf (5 pages)
241NQ045
Part Number:
241NQ045
Description:
SCHOTTKY RECTIFIER
Manufacturer:
International Rectifier Corp.
Datasheet:
241NQ045.pdf (5 pages)

IRF7103QTR Summary of contents

Page 1

Typical Applications Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Benefits Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Description Specifically designed for ...

Page 2

IRF7103Q Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100. 175°C T ...

Page 4

IRF7103Q 10000 0V MHZ C iss = rss = oss = 1000 Ciss Coss 100 Crss 10 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ...

Page 6

IRF7103Q 0.15 0.14 0.13 0. 3.0A 0.11 0.10 0.09 4.5 6.0 7.5 9.0 10.5 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage 2.0 1.8 1.5 1.3 1.0 -75 -50 -25 0 ...

Page 7

Starting T , Junction Temperature ( C) J Fig 16a. Maximum Avalanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50K .2 F 12V .3 F D.U.T. V ...

Page 8

IRF7103Q 1000 Duty Cycle = Single Pulse 100 10 0.01 1 0.05 0.10 0.1 0.01 1.0E-08 1.0E-07 1.0E-06 Fig 19. Typical Avalanche Current Vs.Pulsewidth 25 TOP Single Pulse BOTTOM 10% Duty Cy cle 3. ...

Page 9

SO-8 Package Details & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PI PSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã $Ãb%d %ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ÃÃÃÃÃHPG9ÃQSPUSVTDPITÃIPUÃUPÃ@Y8@@9Ã!$Ãb d &ÃÃÃ9DH@ITDPIÃDTÃUC@ÃG@IBUCÃP ...

Page 10

IRF7103Q SO-8 Tape and Reel TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. NOTES : 1. CONTROLLING ...

Related keywords