IRF7304QPBF International Rectifier, IRF7304QPBF Datasheet

58M7384

IRF7304QPBF

Manufacturer Part Number
IRF7304QPBF
Description
58M7384
Manufacturer
International Rectifier
Datasheet

Specifications of IRF7304QPBF

Continuous Drain Current Id
4.3A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
90mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-700mV
Power Dissipation Pd
2W
Rohs Compliant
Yes
Module Configuration
Dual
Transistor Polarity
P Channel

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7304QPBF
Manufacturer:
ST
Quantity:
4 670
www.irf.com
These HEXFET
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
l
l
l
l
l
l
l
θ
Advanced Process Technology
Ultra Low On-Resistance
Dual P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
®
Power MOSFET's in a Dual

G2
G1
S2
S1
1
2
3
4
Top View
8
7
6
5
D1
D1
D2
D2
SO-8
®
DS(on)
DSS
1

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IRF7304QPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l Dual P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l ® These HEXFET Power MOSFET Dual SO-8 package utilize the ...

Page 2

  ‚ I ≤ ≤− ≤ SD ≤ www.irf.com J Ω ƒ ≤ ƒ ƒ ƒ Ω Ω, ƒ ƒ ƒ ≤ 2 ...

Page 3

VGS TOP - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1. -1.5V 20µs PULSE WIDTH T = 25°C J 0.1 0.01 0 Drain-to-Source Voltage (V) DS ...

Page 4

1MHz iss rss oss iss 1000 C oss C rss 500 0 ...

Page 5

T , Case Temperature ( C) C 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com V DS 90% 10% ...

Page 6

Charge www.irf.com Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U. -3mA Current Sampling Resistors - ...

Page 7

Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current di/dt ...

Page 8

SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOTES: 1. DIMENS IONING & TOLERANCING PER AS ME ...

Page 9

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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