IRF7314QPBF International Rectifier, IRF7314QPBF Datasheet

IRF7314QPBF

Manufacturer Part Number

IRF7314QPBF

Description

58M7392

Manufacturer

International Rectifier

Datasheet

1.IRF7314QPBF.pdf (9 pages)

Specifications of IRF7314QPBF

Continuous Drain Current Id

5.2A

Drain Source Voltage Vds

-20V

On Resistance Rds(on)

49mohm

Rds(on) Test Voltage Vgs

-4.5V

Threshold Voltage Vgs Typ

-700mV

Power Dissipation Pd

2.4W

Rohs Compliant

Yes

Transistor Polarity

P Channel

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Absolute Maximum Ratings

Typical Applications

Thermal Resistance

Benefits

Description

Specifically designed for Automotive applications, these HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the

lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these

Automotive qualified HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and

improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device

for use in Automotive applications and a wide variety of other applications.

The 175°C rating for the SO-8 package provides improved thermal performance with increased safe operating area and dual

MOSFET die capability make it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce

board space and is also available in Tape & Reel.

www.irf.com

Air bag

Anti-lock Braking Systems (ABS)

Electronic Fuel Injection

Advanced Process Technology

Dual P-Channel MOSFET

Ultra Low On-Resistance

Repetitive Avalanche Allowed up to Tjmax

Automotive [Q101] Qualified

@ T

175°C Operating Temperature

, T

STG

= 25°C

= 70°C

= 25°C

= 70°C

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Single Pulse Avalanche EnergyR

Avalanche CurrentQ

Repetitive Avalanche Energy

Junction and Storage Temperature Range

Gate-to-Source Voltage

Parameter

Maximum Junction-to-Ambient

Linear Derating Factor

Parameter

@ 10V

Max.

G 2

G 1

S 1

-20V

DSS

T o p V ie w

HEXFET

See Fig.14, 15, 16

0.058@V

0.098@V

-55 to + 175

DS(on)

± 12

D 1

D 2

Max.

D 2

-5.2

-4.3

610

-5.2

-20

-43

Units

2.4

1.7

62.5

IRF7314Q

Power MOSFET

max

= -4.5V

= -2.7V

SO-8

PD -93945A

-4.42A

-5.2A

mW/°C

Units

°C/W

°C

03/20/02

Related parts for IRF7314QPBF

IRF7314QPBF Summary of contents

Page 1

Typical Applications Anti-lock Braking Systems (ABS) Electronic Fuel Injection Air bag Benefits Advanced Process Technology Dual P-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified Description Specifically designed for Automotive applications, these ...

Page 2

IRF7314Q Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...

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IRF7314QPBF International Rectifier, IRF7314QPBF Datasheet

IRF7314QPBF

Specifications of IRF7314QPBF

Related parts for IRF7314QPBF

IRF7314QPBF Summary of contents

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