1N5418JANTX MICROSEMI, 1N5418JANTX Datasheet

1N5418JANTX

Manufacturer Part Number

1N5418JANTX

Description

Manufacturer

MICROSEMI

Datasheet

1.1N5418JANTX.pdf (3 pages)

Specifications of 1N5418JANTX

Rectifier Type

Switching Diode

Configuration

Single

Peak Rep Rev Volt

400V

Avg. Forward Curr (max)

Rev Curr

1uA

Peak Non-repetitive Surge Current (max)

80A

Forward Voltage

1.5V

Operating Temp Range

-55C to 125C

Package Type

Case E

Rev Recov Time

150ns

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

Lead Free Status / Rohs Status

Not Compliant

Current page: 1 of 3
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6-11-2008 REV B

IMPORTANT: For the most current data, consult MICROSEMI’s website:

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/411

and is ideal for high-reliability applications where a failure cannot be tolerated.

These industry-recognized 3.0 Amp rated rectifiers for working peak reverse

voltages from 50 to 600 volts are hermetically sealed with voidless-glass

construction using an internal “Category I” metallurgical bond. These devices are

also available in surface mount MELF package configurations by adding a “US”

suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also

offers numerous other rectifier products to meet higher and lower current ratings

with various recovery time speed requirements including fast and ultrafast device

types in both through-hole and surface mount packages.

ELECTRICAL CHARACTERISTICS

•

NOTE 1: From 3.0 Amps at T

linearly to zero at T

ambient is sufficiently controlled where T

NOTE 2: I

1N5415

1N5416

1N5417

1N5418

1N5419

1N5420

TYPE

Popular JEDEC registered 1N5415 to 1N5420 series

Voidless hermetically sealed glass package

Triple-Layer Passivation

Internal “Category I” Metallurgical bonds

Working Peak Reverse Voltage 50 to 600 Volts.

JAN, JANTX, JANTXV, and JANS available per MIL-

Surface mount equivalents also available in a square

Solder temperatures: 260

PRF-19500/411

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N5415US thru 1N5420US)

Junction Temperature: -65

Storage Temperature: -65

Thermal Resistance: 20

inch (10 mm) lead length from body

Thermal Impedance: 1.5

Average Rectified Forward Current (I

= 55ºC and 2 Amps @ T

Forward Surge Current (8.3 ms half sine): 80 Amps

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

= 0.5A, I

MAXIMUM RATINGS

100V

200V

400V

500V

600V

50V

RWM

S C O T T S D A L E D I V I S I O N

= 175

FEATURES

= 1A, I

BREAKDOWN

C. These ambient ratings are for PC boards where thermal resistance from mounting point to

VOLTAGE

C/W junction to lead at 3/8

MINIMUM

C/W @ 10 ms heating time

= 100ºC (see Note 1)

C for 10 s (maximum)

VOLTS

C to +175

110V

220V

440V

550V

660V

R(REC)

DESCRIPTION

55V

C to +175

@ 50μA

= 55

= 0.250A

C, derate linearly at 22 mA/

J(max)

): 3 Amps @ T

does not exceed 175

VOLTS

MIN.

Scottsdale Division

0.6

Microsemi

FORWARD

VOLTAGE

@ 9 A

VOLTS

MAX.

FAST RECOVERY GLASS RECTIFIERS

1.5

http://www.microsemi.com

VOIDLESS-HERMETICALLY SEALED

C to 2.0 Amps at T

•

Inherently radiation hard as described in Microsemi

CASE: Hermetically sealed voidless hard glass

TERMINATIONS: Axial-leads are Tin/Lead

MARKING: Body paint and part number, etc.

POLARITY: Cathode band

WEIGHT:

See package dimensions on last page

Fast recovery 3 Amp rectifiers 50 to 600 V

Military and other high-reliability applications

General rectifier applications including bridges,

half-bridges, catch diodes, etc.

High forward surge current capability

Extremely robust construction

Low thermal resistance

Controlled avalanche with peak reverse power

capability

MicroNote 050

with Tungsten slugs

(Sn/Pb) over Copper except for JANS with solid

Silver (Ag) and no finish

TAPE & REEL option: Standard per EIA-296

µA

1.0

MECHANICAL AND PACKAGING

MAXIMUM

REVERSE

CURRENT

1N5415 thru 1N5420

@ V

APPLICATIONS / BENEFITS

RWM

100

µA

750 mg

= 100

RECOVERY

MAXIMUM

REVERSE

(NOTE 2)

TIME t

C. Above T

150

250

400

APPEARANCE

“E” Package

AMPS

= 100

3.0

CURRENT I

RECTIFIED

AVERAGE

(NOTE 1)

C, derate

AMPS

Page 1

100

2.0

Related parts for 1N5418JANTX

1N5418JANTX Summary of contents

Page 1

... I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5415US thru 1N5420US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages ...

Page 2

... E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5415 thru 1N5420 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Definition GRAPHS FIGURE 2 – Typical Forward Current vs. FIGURE 4 – Maximum Current vs. Lead Temperature Microsemi Scottsdale Division Forward Voltage Page 2 ...

Page 3

... Copyright © 2008 6-11-2008 REV B 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 1N5415 thru 1N5420 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS DIMENSIONS AND SCHEMATIC Lead Tolerance = + .002 -.003 in Microsemi Scottsdale Division Page 3 ...

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