NTMD5838NLR2G ON Semiconductor, NTMD5838NLR2G Datasheet

NTMD5838NLR2G

Manufacturer Part Number

NTMD5838NLR2G

Description

MOSFET N-CH 40V 8.9A 8SOIC

Manufacturer

ON Semiconductor

Series

-r

Datasheet

1.NTMD5838NLR2G.pdf (6 pages)

Specifications of NTMD5838NLR2G

Fet Type

2 N-Channel (Dual)

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

25 mOhm @ 7A, 10V

Drain To Source Voltage (vdss)

40V

Current - Continuous Drain (id) @ 25° C

7.4A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

17nC @ 10V

Input Capacitance (ciss) @ Vds

785pF @ 20V

Power - Max

2.1W

Mounting Type

Package / Case

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

NTMD5838NLR2G

Manufacturer:

ON/安森美

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

NTMD5838NLR2G

Company:

H&T Electronics

Part Number:

NTMD5838NLR2G

Quantity:

110 000

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NTMD5838NL

Power MOSFET

40 V, 8.9 A, 25 mW, Dual N−Channel SO−8

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 sq−in pad

2. Surface−mounted on FR4 board using 0.155 in sq (100mm

3. Both channels receive equivalent power dissipation

April, 2011 − Rev. 0

MAXIMUM RATINGS

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.1 mH)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

Junction−to−Ambient Steady State

(Notes 1 & 3)

Junction−to−Ambient − t ≤10 s (Note 1)

Junction−to−Ambient Steady State (Note 2)

Compliant

Low R

Low Capacitance

Optimized Gate Charge

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

(Cu area = 1.127 in sq [2 oz] including traces).

qJA

1 W applied on each channel: T

(Note 1)

DS(on)

qJA

Parameter

Steady

t ≤10 s

State

= 25°C unless otherwise stated)

= 10 ms

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 25°C

= 70°C

= 2 W * 58°C/W + 25°C = 141°C

Symbol

EAS

, T

IAS

qJA

DSS

STG

Value

−55 to

Value

106

+150

) pad size.

±20

260

7.4

5.9

2.1

1.3

8.9

7.1

3.0

1.9

7.0

°C/W

Unit

°C

†For information on tape and reel specifications,

NTMD5838NLR2G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(BR)DSS

40 V

(Note: Microdot may be in either location)

Device

ORDERING INFORMATION

N−CHANNEL MOSFET

http://onsemi.com

CASE 751

STYLE 11

30.8 mW @ 4.5 V

25 mW @ 10 V

SO−8

= Assembly Location

= Year

= Work Week

= Pb−Free Package

DS(ON)

(Pb−Free)

Package

SO−8

Publication Order Number:

MARKING DIAGRAM/

PIN ASSIGNMENT

MAX

D1 D1 D2 D2

S1 G1 S2 G2

(Top View)

2500/Tape & Reel

D5838N

NTMD5838NL/D

AYWW

Shipping

8.9 A

MAX

†

Related parts for NTMD5838NLR2G

NTMD5838NLR2G Summary of contents

Page 1

... A T 260 °C L (Note: Microdot may be in either location) Symbol Value Unit R 58 qJA NTMD5838NLR2G °C qJA †For information on tape and reel specifications, R 106 qJA including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES & ...

Page 3

TYPICAL PERFORMANCE CURVES DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.06 0.05 0.04 0.03 0.02 0. ...

Page 4

C 800 iss 600 400 200 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 4.5 ...

Page 5

TYPICAL PERFORMANCE CURVES 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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