IRF7341 International Rectifier, IRF7341 Datasheet

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IRF7341

Manufacturer Part Number
IRF7341
Description
Manufacturer
International Rectifier
Type
Power MOSFETr
Datasheet

Specifications of IRF7341

Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.05Ohm
Drain-source On-volt
55V
Gate-source Voltage (max)
±20V
Continuous Drain Current
4.7A
Power Dissipation
2W
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Lead Free Status / Rohs Status
Not Compliant

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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
R
V
I
I
I
P
P
V
V
E
dv/dt
T
D
D
DM
J,
DS
D
D
GS
GSM
AS
θJA
@ T
@ T
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
@T
@T
T
STG
C
C
C
C
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy‚
Peak Diode Recovery dv/dt ƒ
Junction and Storage Temperature Range
Parameter
Parameter
GS
GS
@ 10V
@ 10V
G2
G1
S2
S1
1
2
3
4
Top View
Typ.
–––
HEXFET
8
6
5
7
-55 to + 150
Max.
0.016
D1
D1
D2
D2
± 20
4.7
3.8
2.0
1.3
5.0
55
38
30
72
SO-8
®
R
IRF7341
DS(on)
Power MOSFET
V
Max.
62.5
DSS
= 0.050Ω
= 55V
PD -91703A
Units
Units
W/°C
°C/W
V/ns
°C
V
A
V
V
1

Related parts for IRF7341

IRF7341 Summary of contents

Page 1

... Maximum Junction-to-Ambient θJA www.irf.com HEXFET Top View Max. @ 10V GS @ 10V GS 0.016 - 150 Typ. … ––– PD -91703A IRF7341 ® Power MOSFET V = 55V DSS R = 0.050Ω DS(on) SO-8 Units 55 V 4.7 3 2.0 1.3 W/°C ± 5.0 V/ns °C Max. Units 62.5 °C/W ...

Page 2

... IRF7341 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs DSS Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd t Turn-On Delay Time ...

Page 3

... T = 150 20µs PULSE WIDTH Gate-to-Source Voltage (V) GS www.irf.com 100 TOP BOTTOM 10 ° 100 0.1 100 10 ° 25V 0 0.2 IRF7341 VGS 15V 12V 10V 8.0V 4.5V 6.0V 4.0V 3.5V 3.0V 3.0V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage ( 150 C ° ° 0.5 ...

Page 4

... IRF7341 2.5 4. 2.0 1.5 1.0 0.5 0.0 -60 -40 - 100 120 140 160 T , Junction Temperature ( C) J 0.12 0.10 0. 4.7A D 0.06 0. Gate-to-Source Voltage ( 0.120 0.100 0.080 0.060 V = 10V GS 0.040 0 ° 200 160 120 Starting T , Junction Temperature ( C) VGS = 4.5V VGS = 10V Drain Current ( TOP 2 ...

Page 5

... C oss 200 C rss Drain-to-Source Voltage (V) DS 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.0001 0.001 www.irf.com SHORTED 100 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7341 4. 48V 30V 12V Total Gate Charge (nC Notes: 1. Duty factor Peak thJA 100 5 ...

Page 6

... IRF7341 SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . ...

Page 7

... IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12.40 ( .488 ) Data and specifications subject to change without notice. TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/05 IRF7341 7 ...

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