DMN2004K-7 Diodes Zetex, DMN2004K-7 Datasheet

DMN2004K-7

Manufacturer Part Number
DMN2004K-7
Description
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet

Specifications of DMN2004K-7

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.55Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Continuous Drain Current
630mA
Power Dissipation
350mW
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DMN2004K-7
Manufacturer:
Diodes Inc
Quantity:
56 908
Part Number:
DMN2004K-7
Manufacturer:
DIODES
Quantity:
180
Part Number:
DMN2004K-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
DMN2004K-7-F
Manufacturer:
DIODES
Quantity:
30 000
Part Number:
DMN2004K-7-F/NAB
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering Information
Marking Information
Product Summary
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R
performance, making it ideal for high efficiency power management
applications.
Notes:
Date Code Key
DMN2004K
Document number: DS30938 Rev. 5 - 2
DC-DC Converters
Power management functions
V
Month
(BR)DSS
Code
Code
Year
20V
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
ESD PROTECTED TO 2kV
Part Number
DMN2004K-7
DS(on)
) and yet maintain superior switching
0.55Ω @ V
Jan
0.9Ω @ V
1
2006
T
R
DS(ON)
(Note 3)
GS
Feb
GS
2
= 1.8V
= 4.5V
2007
Mar
3
U
NAB
Top View
SOT-23
T
A
630mA
410mA
Apr
4
= 25°C
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
I
D
2008
www.diodes.com
V
May
5
Gate
SOT-23
NAB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Case
1 of 6
Gate
Protection
Diode
Equivalent Circuit
Features and Benefits
Mechanical Data
Jun
6
Low On-Resistance: R
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected up to 2KV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (approximate)
2009
W
Drain
Source
Jul
7
Aug
8
2010
X
DS(ON)
G
Top View
Sep
= 550
9
D
3000/Tape & Reel
(max)
Packaging
2011
S
Oct
Y
mΩ @ V
O
DMN2004K
GS
Nov
© Diodes Incorporated
N
November 2010
= 4.5V
2012
Z
Dec
D

Related parts for DMN2004K-7

DMN2004K-7 Summary of contents

Page 1

... DC-DC Converters • Power management functions ESD PROTECTED TO 2kV Ordering Information (Note 3) Part Number DMN2004K-7 Notes purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details our website at http://www.diodes.com. Marking Information Date Code Key ...

Page 2

... Q g ⎯ 0 ⎯ 0 ⎯ 5.7 t D(on) ⎯ 8 ⎯ 59.4 t D(off) ⎯ 37 ⎯ 5 ⎯ www.diodes.com DMN2004K Value Units 20 ±8 630 mA 450 410 mA 300 1.5 Value Units 350 mW 357 °C/W -65 to +150 °C Max Unit Test Condition ⎯ 0V 10μ μ 16V ± ...

Page 3

... Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN2004K Document number: DS30938 Rev Fig 0.5 0.1 ° ° ° - ° - www.diodes.com DMN2004K V , GATE-SOURCE VOLTAGE (V) GS Reverse Drain Current vs. Source-Drain Voltage I DRAIN CURRENT ( Fig. 4 Static Drain-Source On-Resistance vs. Drain Current November 2010 © Diodes Incorporated 6 ...

Page 4

... On-Resistance vs. Drain Current and Gate Voltage I , DRAIN CURRENT (mA) D Fig. 11 Forward Transfer Admittance vs. Drain Current DMN2004K Document number: DS30938 Rev JUNCTION TEMPERATURE ( C) j Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1,000 V , DRAIN SOURCE VOLTAGE (V) DS Fig. 12 Capacitance Variation www.diodes.com DMN2004K ° November 2010 © Diodes Incorporated ...

Page 5

... Suggested Pad Layout DMN2004K Document number: DS30938 Rev 0.8 1.0 1.2 0 Dim www.diodes.com DMN2004K V = 15V 0.5A D 0.5 1 1 TOTAL GATE CHARGE (nC) g Fig. 14 Gate-Charge Characteristics SOT-23 Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 ...

Page 6

... Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2010, Diodes Incorporated www.diodes.com DMN2004K Document number: DS30938 Rev IMPORTANT NOTICE LIFE SUPPORT www.diodes.com DMN2004K November 2010 © Diodes Incorporated ...

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