IS43DR16320B-3DBLI ISSI, Integrated Silicon Solution Inc, IS43DR16320B-3DBLI Datasheet - Page 10

no-image

IS43DR16320B-3DBLI

Manufacturer Part Number
IS43DR16320B-3DBLI
Description
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
DDR2 SDRAMr
Datasheet

Specifications of IS43DR16320B-3DBLI

Organization
32Mx16
Density
512Mb
Address Bus
15b
Access Time (max)
450ps
Maximum Clock Rate
667MHz
Operating Supply Voltage (typ)
1.8V
Package Type
FBGA
Operating Temp Range
-40C to 85C
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Supply Current
280mA
Pin Count
84
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IS43DR16320B-3DBLI
Manufacturer:
ISSI
Quantity:
1 000
Part Number:
IS43DR16320B-3DBLI
Manufacturer:
ISSI
Quantity:
24
IS43/46DR86400B, IS43/46DR16320B
Clock Enable (CKE) Truth Table
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10. Power Down and Self Refresh cannot be entered while Read or Write operations, (Extended) Mode Register Set operations or Precharge operations are in
11. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to
12. The state of ODT does not affect the states described in this table. The ODT function is not available during Self Refresh.
13. The Power Down does not perform any refresh operations. The duration of Power Down Mode is therefore limited by the refresh requirements outlined in this
14. CKE must be maintained HIGH while the DDRII SDRAM is in OCD calibration mode.
15. “X” means “Don’t Care (including floating around VREF)” in Self Refresh and Power Down. However ODT must be driven HIGH or LOW in Power Down if the ODT
16. VREF must be maintained during Self Refresh operation.
Data Mask (DM) Truth Table
Note:
1.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. E, 01/17/2011
Current State
Bank(s) Active
All Banks Idle
Power Down
Self Refresh
CKE (N) is the logic state of CKE at clock edge N; CKE (N–1) was the state of CKE at the previous clock edge.
Current state is the state of the DDR2 SDRAM immediately prior to clock edge N.
COMMAND (N) is the command registered at clock edge N, and ACTION (N) is a result of COMMAND (N).
All states and sequences not shown are illegal or reserved unless explicitly described elsewhere in this document.
On Self Refresh Exit, DESELECT or NOP commands must be issued on every clock edge occurring during the tXSNR period. Read commands may be issued only
after tXSRD (200 clocks) is satisfied.
Self Refresh mode can only be entered from the All Banks Idle state.
Must be a legal command as defined in the Command Truth Table.
Valid commands for Power Down Entry and Exit are NOP and DESELECT only.
Valid commands for Self Refresh Exit are NOP and DESELECT only.
progress.
achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH.
datasheet.
function is enabled (Bit A2 or A6 set to “1” in EMR[1]).
Used to mask write data, provided coincident with the corresponding data.
Name (Functional)
Write Enable
Write Inhibit
(2)
Previous Cycle
H
H
H
H
L
L
L
L
(1)
(N-1)
CKE
Current Cycle
DM
H
L
H
H
H
L
L
L
L
L
(1)
(N)
RAS#, CAS#, WE#, CS#
Deselect or NOP
Deselect or NOP
Deselect or NOP
Deselect or NOP
Command (N)
Refresh
X
X
Refer to the Command Truth Table
(3)
Valid
DQs
X
Precharge Power Down Entry
Active Power Down Entry
Maintain Power-Down
Maintain Self-Refresh
Self-Refresh Entry
Power Down Exit
Self-Refresh Exit
Action (N)
(3)
Note
1
1
4, 8, 10, 11, 13
4, 8, 10, 11, 13
4, 8, 11, 13
6, 9, 11, 13
11, 13, 15
11, 15, 16
4, 5, 9, 16
Notes
7
10

Related parts for IS43DR16320B-3DBLI