MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 14

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 9:
Table 4:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Cycle
First
Second
Third
Fourth
Fifth
Cache Register
Data Register
4,096 blocks
Array Addressing: MT29F4G08BxB and MT29F8G08FxB
CAx = column address; RAx = row address.
Array Organization for MT29F4G08BxB and MT29F8G08FxB (x8)
RA19
RA27
LOW
LOW
I/O7
CA7
Notes: 1. Die address boundary: 0 = 0 – 2Gb, 1 = 2Gb – 4Gb.
Note:
RA18
RA26
LOW
LOW
I/O6
CA6
For the 8Gb MT29F8G08F, the 4Gb array organization shown here applies to each chip
enable (CE# and CE2#).
2,048
2,048
1 Block
RA17
RA25
LOW
LOW
I/O5
CA5
2,112 bytes
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
RA16
RA24
LOW
LOW
I/O4
CA4
14
64
64
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CA11
RA15
RA23
LOW
I/O3
CA3
64 pages = 1 block
1 page
1 block
1 device = (2K + 64) bytes x 64 pages
I/O 7
I/O 0
CA10
RA14
RA22
LOW
= (2K + 64 bytes)
= (2K + 64) bytes x 64 pages
= (128K + 4K) bytes
= 4,224 Mb
I/O2
CA2
x 4,096 blocks
(128K + 4K) bytes
©2004 Micron Technology, Inc. All rights reserved.
RA29
RA13
RA21
I/O1
CA1
CA9
1
Addressing
RA12
RA20
RA28
I/O0
CA0
CA8