MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 19

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 14:
Figure 15:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
I
TC vs. Rp
OL
vs. Rp
I
T
1.20µs
1.00µs
800ns
600ns
400ns
200ns
3.50mA
3.00mA
2.50mA
2.00mA
1.50mA
1.00mA
0.50mA
0.00mA
0ns
0
0
2kΩ
2000
4kΩ
4000
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
6000
6kΩ
Rp
Rp
19
8000
8kΩ
10000
10kΩ
I
OL
I
RC = TC
C = 100pF
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OL
@3.60V (max)
@3.60V (max)
12000
12kΩ
©2004 Micron Technology, Inc. All rights reserved.
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