MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 26

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

READ ID 90h
Figure 21:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
READ ID Operation
Notes: 1. See Table 8 on page 27.
The READ ID command is used to read the 4 bytes of identifier codes programmed into
the devices. The READ ID command reads a 4-byte table that includes Manufacturer’s
ID, device configuration, and part-specific information. See Table 8 on page 27, which
shows complete listings of all configuration details.
Writing 90h to the command register puts the device into the read ID mode. The com-
mand register stays in this mode until another valid command is issued. (See Figure 21.)
WE#
I/Ox
CE#
ALE
RE#
CLE
90h
Address, 1 Cycle
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
00h
26
t WHR
t AR
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t REA
Manufacturer
Byte 0
ID
1
Device
Byte 1
ID
1
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.
Don't Care
Byte 2
Byte 3
1