MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 27

no-image

MT29F8G08AAAWP-ET:ATR

Manufacturer Part Number
MT29F8G08AAAWP-ET:ATR
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08AAAWP-ET:ATR

Cell Type
NAND
Density
8Gb
Access Time (max)
18ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
Table 8:
READ STATUS 70h
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Spare area size (bytes)
Block size (w/o spare)
MT29F2G08AAB
MT29F2G16AAB
MT29F4G08BAB
MT29F4G16BAB
MT29F8G08FAB
Organization
Byte value
Byte value
Byte value
Page size
Reserved
Byte 0
Byte 1
Byte 2
Byte 3
Device ID and Configuration Codes
Notes: 1. b = binary, h = hex
Manufacturer ID
2Gb, x8, 3V
2Gb, x16, 3V
4Gb, x8, 3V
4Gb, x16, 3V
8Gb, x8, 3V
Don’t Care
These NAND Flash devices have an 8-bit status register that the software can read dur-
ing device operation. On the x16 device, I/O[15:8] are “0” when reading the status regis-
ter. Table 9 on page 28 describes the status register.
After the READ STATUS command has been issued to the NAND Flash device, all subse-
quent READ cycles will output data from the status register until another command is
issued. Note that the RE# pin can be toggled multiple times without issuing a new READ
STATUS command, as shown in Figure 21. Each time the RE# pin is toggled, the updated
status will be output on I/O[7:0].
In addition, after a READ STATUS command has been issued to the NAND Flash device,
the status register provides continually updated output on I/O[7:0] as long as CE# and
RE# are held LOW, i.e., RE# does not have to be toggled.
Note that MT29FxGxxxAB devices do not support a READ STATUS operation in which
the READ STATUS (70h) command is repeatedly issued after each RE# toggle.
Additional details regarding READ STATUS implementation are available in Micron
technical note TN-29-13 at: www.micron.com/products/nand/massstorage/technote.
Device ID
Options
2. The MT29F8G08FAB device ID code reflects the configuration of each 4Gb section.
Micron
128KB
2KB
x16
x16
64
x8
x8
I/O7
0
1
1
1
1
1
0
0
0
x
I/O6
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
0
1
1
1
1
1
x
0
1
0
1
I/O5
27
1
0
0
0
0
0
0
0
0
x
I/O4
0
1
0
1
0
1
x
1
1
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
I/O3
1
1
1
1
1
1
x
0
0
0
I/O2
1
0
0
1
1
1
1
1
1
x
I/O1
0
1
1
0
0
0
x
0
0
0
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.
I/O0
0
0
0
0
0
0
1
1
1
x
Value
DAh
CAh
DCh
CCh
DCh
XXh
2Ch
01b
01b
01b
15h
55h
0b
1b
0b
1
Notes
2

Related parts for MT29F8G08AAAWP-ET:ATR