MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 28

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 22:
Table 9:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
[15:8]
Bit
SR
WE#
0
1
2
3
4
5
6
7
I/Ox
CE#
RE#
CLE
Write protect
Ready/busy
Ready/busy
Program
Pass/fail
Page
Status Register Bit Definition
–
–
–
–
–
Status Register Operation
Notes: 1. Status register bit 5 is “0” during the actual programming operation. If cache mode is
Program Page
Cache Mode
Write protect
Pass/fail (N-1)
Ready/busy
Pass/fail (N)
Ready/busy
While monitoring the read status to determine when the
data register) is complete, the user must re-issue the READ (00h) command to make the
change from STATUS to DATA. After the READ command has been re-issued, pulsing
the RE# line will output data, starting from the initial column address.
cache
2. Status register bit 6 is “1” when the cache is ready to accept new data. R/B# follows bit 6.
70h
–
–
–
–
used, this bit will be “1” when all internal operations are complete.
See Figure 20 on page 25, and Figure 25 on page 30.
2
1
Write protect
Page Read
Ready/busy
Ready/busy
t CLR
t CLEA
–
–
–
–
–
–
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Cache Mode
Write protect Write protect “0” = Protected
Ready/busy
t REA
Page Read
Ready/busy
28
cache
–
–
–
–
–
–
Status
2
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Block Erase
Ready/busy
Ready/busy
Pass/fail
–
–
–
–
–
Toggle RE# as required
“0” = Successful PROGRAM/ERASE
“1” = Error in PROGRAM/ERASE
“0” = Successful PROGRAM/ERASE
“1” = Error in PROGRAM/ERASE
“0”
“0”
“0”
“0” = Busy
“1” = Ready
“0” = Busy
“1” = Ready
“1” = Not protected
“0”
t
R (transfer from Flash array to
Status
Command Definitions
©2004 Micron Technology, Inc. All rights reserved.
Definition
Status