MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 39

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Table 13:
Table 14:
Table 15:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Parameter
Parameter
Description
Sequential read current
Program current
Erase current
Standby current (TTL)
Standby current (CMOS)
MT29F2GxxAAB
Standby current (CMOS)
MT29F4GxxBAB
MT29F8G08FAB
Input leakage current
Output leakage current
Input high voltage
Input low voltage (all inputs)
Output high voltage
Output low voltage
Output low current (R/B#)
Number of valid blocks
Input capacitance
Input/output capacitance (I/O)
DC and Operating Characteristics
Valid Blocks
Capacitance
Notes: 1. Invalid blocks are blocks that contain one or more bad bits. The device may contain bad
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Note:
2. Block 00h (the first block) is guaranteed to be valid and does not require error correction
2. Test conditions: T
The PRE function is not supported on extended-temperature devices.
blocks upon shipment. Additional bad blocks may develop over time; however, the total
number of available blocks will not drop below N
device. Do not erase or program blocks marked invalid by the factory.
up to 1,000 PROGRAM/ERASE cycles.
Symbol
Symbol
N
C
C
VB
IN
IO
PRE = WP# = 0V/V
PRE = WP# = 0V/V
PRE = WP# = 0V/V
RE#, WP#, PRE, R/B#
CE#, CLE, ALE, WE#,
I/O [7–0], I/O [15–0]
V
CE# = V
CE# = V
V
t
OUT
CYCLE = 30ns,
I
IN
Conditions
OH
I
I
OL
V
OUT
CE# = V
CE# = V
OL
= 0V to V
= 0V to V
= -400µA
= 2.1mA
= 0.4V
= 0mA
–
–
CC
CC
–
c
MT29F2GxxAAB
MT29F2GxxAAB
MT29F2GxxAAB
MT29F4GxxBAB
MT29F8G08FAB
MT29F4GxxBAB
MT29F8G08FAB
MT29F4GxxBAB
MT29F8G08FAB
- 0.2V,
- 0.2V,
= 25°C; f = 1 MHz; V
IH
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
IL
,
,
CC
Device
Device
CC
CC
CC
CC
39
I
Symbol
OL
Icc1
I
I
I
I
I
V
V
V
CC
CC
I
V
SB
SB
SB
(R/B#)
I
LO
OH
LI
OL
IH
IL
2
3
1
2
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
= 0V.
2,008
4,016
8,032
Min
0.8 x Vcc
Min
-0.3
2.4
8
–
–
–
–
–
–
–
–
–
Max
VB
10
20
40
10
20
40
during the endurance life of the
2,048
4,096
8,192
Max
Electrical Characteristics
Typ
15
15
15
10
20
10
–
–
–
–
–
–
–
©2004 Micron Technology, Inc. All rights reserved.
Blocks
Unit
Unit
pF
pF
V
CC
Max
100
±10
±10
0.8
0.4
30
30
30
50
1
–
–
+ 0.3
Notes
Notes
1, 2
1, 2
1, 2
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V