MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 41

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Table 18:
Table 19:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
Parameter
Parameter
ALE to RE# delay
CE# access time
CE# HIGH to output High-Z
CLE access time
CLE to RE# delay
Cache busy in page read cache
mode (first 31h)
Cache busy in page read cache
mode (next 31h and 3Fh)
Ouput High-Z to RE# LOW
Data output hold time
Data transfer from Flash array to
data register
READ cycle time
RE# access time
RE# HIGH hold time
RE# HIGH to output High-Z
RE# pulse width
Data transfer from Flash array to
data register at power-up with
PRE enabled @ 3.3V Vcc
Ready to RE# LOW
Reset time
(READ/PROGRAM/ERASE)
WE# HIGH to busy
WE# HIGH to RE# LOW
Number of partial page programs
Block erase time
Busy time for cache program
Last page program time
Page program time
AC Characteristics: Normal Operation
PROGRAM/ERASE Characteristics
Notes: 1. For PROGRAM PAGE CACHE MODE operations, the x16 AC Characteristics apply for both
Notes: 1. Eight total to the same page.
2. Transition is measured ±200mV from steady-state voltage with load. This parameter is
3. The PRE function is not supported on extended-temperature devices.
4. If RESET (FFh) command is loaded at ready state, the device goes busy for maximum 5µs.
5. Do not issue a new command during
2.
3.
x16 and x8 devices.
sampled and not 100 percent tested.
t
t
time (last page) – data load time (last page).
CBSY MAX time depends on timing between internal program completion and data in.
LPROG =
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AR
CEA
CHZ
CLEA
CLR
DCBSYR1
DCBSYR2
IR
OH
R
RC
REA
REH
RHZ
RP
RPRE
RR
RST
WB
WHR
t
PROG (last page) +
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
Symbol
NOP
t
t
t
t
t
BERS
CBSY
LPROG
PROG
DCBSYR1
Min
10
10
15
50
15
25
20
60
0
–
–
–
–
–
–
–
–
–
–
41
x16
t
PROG (last – 1 page) – cmd load time (last page) – addr load
5/10/500
Max
100
45
20
45
25
25
30
30
25
3
–
–
–
–
–
–
–
–
–
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
WB, even if R/B# is ready.
Typ
300
2
3
–
–
t
DCBSYR1
Min
10
10
15
30
10
15
20
60
–
–
–
–
0
–
–
–
–
–
–
x8
Electrical Characteristics
Max
700
700
5/10/500
8
3
–
Max
100
23
20
28
25
25
18
30
25
–
3
–
–
–
–
–
–
–
©2004 Micron Technology, Inc. All rights reserved.
Cycle
Unit
Unit
ms
µs
µs
ns
ns
ns
ns
ns
µs
µs
ns
ns
µs
ns
ns
ns
ns
ns
µs
ns
µs
ns
ns
–
Notes
Notes
4, 5
1
2
3
1
2
1
1
1
1
1
2
1
3
4