MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 45

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MT29F8G08AAAWP-ET:ATR

Manufacturer Part Number
MT29F8G08AAAWP-ET:ATR
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT29F8G08AAAWP-ET:ATR

Cell Type
NAND
Density
8Gb
Access Time (max)
18ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
30b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
TSOP-I
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
1G
Supply Current
30mA
Mounting
Surface Mount
Pin Count
48
Lead Free Status / Rohs Status
Compliant
Figure 40:
Figure 41:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
R/B#
WE#
R/B#
ALE
I/Ox
CE#
RE#
CLE
I/Ox
CE#
RE#
ALE
CLE
00h
00h
Add 1
READ Operation with CE# “Don’t Care”
RANDOM DATA READ
Col
Add 2
Col
Address (5 Cycles)
Add 1
Row
Add 2
Row
Add 3
Row
30h
30h
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
t
WB
t R
Busy
t
R
t REA
t CEA
45
t
t
D
t
RR
AR
RC
OUT
N
D
N + 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OUT
05h
Add 1
Data Output
Col
Add 2
Col
©2004 Micron Technology, Inc. All rights reserved.
Timing Diagrams
E0h
t
CLR
t
WHR
t
CLEA
D
t
M
REA
OUT
Don’t Care
Don‘t Care
M + 1
D
OUT

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