MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 50

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

Figure 46:
Figure 47:
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
WE#
ALE
I/Ox
CE#
CLE
WE#
ALE
I/Ox
CLE
CE#
RE#
80h
READ ID Operation
Program Operation with CE# “Don’t Care”
90h
Address (5 Cycles)
Address, 1 Cycle
00h
t
WHR
t
AR
t
t
CS
WP
t
CH
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
t
REA
Manufacturer ID
Data
Byte 0
50
Input
1
Device ID
Byte 1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
Don't Care
Byte 2
Data
Byte 3
©2004 Micron Technology, Inc. All rights reserved.
1
Timing Diagrams
Input
Don‘t Care
10h