MT29F8G08AAAWP-ET:ATR Micron Technology Inc, MT29F8G08AAAWP-ET:ATR Datasheet - Page 7

• Manufacturer Part Number: MT29F8G08AAAWP-ET:ATR
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08AAAWP-ET:ATR

• Cell Type: NAND
• Density: 8Gb
• Access Time (max): 18ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 30b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP-I
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1G
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Compliant

General Description
PDF: 09005aef818a56a7 / Source: 09005aef81590bdd
2gb_nand_m29b__2.fm - Rev. I 1/06 EN
NAND technology provides a cost-effective solution for applications requiring high-
density solid-state storage. The MT29F2G08AxB and MT29F2G16AxB are 2Gb NAND
Flash memory devices. The MT29F4G08BxB and MT29F4G16BxB are two-die stacks that
operate as a single 4Gb device. The MT29F8G08FAB is a four-die stack that operates as
two independent 4Gb devices (MT29F4G08BxB), providing a total storage capacity of
8Gb in a single, space-saving package. Micron NAND Flash devices include standard
NAND features as well as new features designed to enhance system-level performance.
Micron NAND Flash devices use a highly multiplexed 8- or 16-bit bus (I/O[7:0] or
I/O[15:0]) to transfer data, addresses, and instructions. The five command pins (CLE,
ALE, CE#, RE#, WE#) implement the NAND command bus interface protocol. Three
additional pins control hardware write protection (WP#), monitor device status (R/B#),
and initiate the auto-read feature (PRE—3V device only). Note that the PRE function is
not supported on extended-temperature devices.
This hardware interface creates a low-pin-count device with a standard pinout that is
the same from one density to another, allowing future upgrades to higher densities with-
out board redesign.
MT29F2G and MT29F4G devices contain 2,048 and 4,096 erasable blocks respectively.
Each block is subdivided into 64 programmable pages. Each page consists of 2,112 bytes
(x8) or 1,056 words (x16). The pages are further divided into a 2,048-byte data storage
region with a separate 64-byte area on the x8 device; and on the x16 device, separate
1,024-word and 32-word areas. The 64-byte and 32-word areas are typically used for
error management functions.
The contents of each 2,112-byte page can be programmed in 300µs, and an entire 132K-
byte/66K word block can be erased in 2ms. On-chip control logic automates PROGRAM
and ERASE operations to maximize cycle endurance. ERASE/PROGRAM endurance is
specified at 100,000 cycles when using appropriate error correcting code (ECC) and
error management.
2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory
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Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2004 Micron Technology, Inc. All rights reserved.