TDA1517ATW/N1,112 NXP Semiconductors, TDA1517ATW/N1,112 Datasheet
TDA1517ATW/N1,112
Specifications of TDA1517ATW/N1,112
935268373112
TDA1517ATWDH
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TDA1517ATW/N1,112 Summary of contents
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DATA SHEET TDA1517ATW 8 W BTL or 2 × power amplifier Product specification Supersedes data of 2001 Feb 14 INTEGRATED CIRCUITS 2001 Apr 17 ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier FEATURES • Requires very few external components • Flexibility in use: mono Bridge-Tied Load (BTL) and stereo Single-Ended (SE); it should be noted that in stereo applications the outputs of both amplifiers are in opposite phase • High output power • ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier BLOCK DIAGRAM handbook, full pagewidth 3 non-inverting input 1 5 SVRR inverting 18 input 2 2001 Apr 17 mute switch kΩ − − kΩ 18 kΩ standby switch VA 15 kΩ − 15 kΩ mute reference voltage 18 kΩ ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier PINNING SYMBOL PIN n.c. 1 not connected n.c. 2 not connected IN1+ 3 non-inverting input 1 SGND 4 signal ground SVRR 5 supply voltage ripple rejection n.c. 6 not connected n.c. 7 not connected OUT1a 8 output 1a OUT1b 9 output 1b PGND1 10 power ground 1 ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V supply voltage and DC short-circuit-safe voltage PSC V reverse polarity voltage rp ERG energy handling capability at outputs o I non-repetitive peak output current OSM ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier AC CHARACTERISTICS = 25 °C; unless otherwise specified kHz amb SYMBOL PARAMETER SE application; note 1 P output power o THD total harmonic distortion f low frequency roll-off ro(L) f high frequency roll off ro(H) G voltage gain V ⎪ΔG ⎪ channel balance ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier Notes to the characteristics = 4 Ω, measured in Fig. Output power is measured directly at the output pins of the IC. 3. Frequency response externally fixed (p-p); R ripple ripple(max) 5. Noise voltage measured in a bandwidth kHz. 6. Noise output voltage independent (RMS). ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier handbook, full pagewidth IN1+ IN2− 10 kΩ μc1 MICRO- CONTROLLER μc2 μc1 μ Mute 0 1 Standby 1 0 Test conditions = 25 °C; unless otherwise specified amb = 8 Ω, fixed gain = 26 dB, audio application kHz band-pass kHz. In the figures as a function of frequency a band-pass kHz was applied ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier The formula for the cut-off frequency at the input follows ------------------------------ × π × thus f = ----------------------------------------------------------------------------- - IC – 3 × π × × × 470 As can be seen it is not necessary to use high capacitor values for the input; so the delay during switch-on, which is necessary for charging the input capacitors, can be minimized ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier Thermal behaviour (PCB design considerations) The typical thermal resistance [R HTSSOP20 package is 37 K/W if the IC is soldered on a printed-circuit board with double sided 35 μm copper with a minimum area of approximately 30 cm usable thermal resistance depends strongly on the ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier handbook, full pagewidth top view bottom copper layout For BTL applications the two 1000 μF/16 V capacitors must be replaced by 0 Ω jumpers. Fig.6 Printed-circuit board layout for BTL and SE application. 2001 Apr 1517ATW 1000 μF ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier Typical performance characteristics for BTL application and handbook, halfpage THD (%) 1 −1 10 −2 10 −2 − Fig.7 THD as a function handbook, halfpage SVRR (dB) −20 −40 −60 mute −80 −2 − Fig.9 SVRR as a function of frequency. ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier 6 handbook, halfpage P ( Ω Ω Fig.11 Power dissipation as a function of P 2001 Apr 17 MGU311 handbook, halfpage ( Product specification TDA1517ATW ( Ω 8 Ω Fig. function MGU323 16 Ω ( ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier PACKAGE OUTLINE HTSSOP20: plastic thermal enhanced thin shrink small outline package; 20 leads; body width 4.4 mm; exposed die pad y exposed die pad side Z 20 pin 1 index 1 DIMENSIONS (mm are the original dimensions) A UNIT max. 0.15 ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “Data Handbook IC26; Integrated Circuit Packages” (document order number 9398 652 90011). ...
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... NXP Semiconductors 8 W BTL or 2 × power amplifier Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE BGA, HBGA, LFBGA, SQFP, TFBGA HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, SMS (3) PLCC , SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO Notes 1 ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. The Ordering information was modified accordingly. ...