TDA8932BTW/N2,118 NXP Semiconductors, TDA8932BTW/N2,118 Datasheet - Page 30

• Manufacturer Part Number: TDA8932BTW/N2,118
• Description: IC AMP AUDIO CLASS D 32HTSSOP
• Manufacturer: NXP Semiconductors
• Type: Class Dr

Specifications of TDA8932BTW/N2,118

• Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
• Package / Case: 32-TSSOP Exposed Pad, 32-eTSSOP, 32-HTSSOP
• Max Output Power X Channels @ Load: 55W x 1 @ 8 Ohm; 26.5W x 2 @ 4 Ohm
• Voltage - Supply: 10 V ~ 36 V, ±5 V ~ 18 V
• Features: Depop, Differential Inputs, Mute, Short-Circuit and Thermal Protection
• Mounting Type: Surface Mount
• Product: Class-D
• Output Power: 55 W
• Available Set Gain: 36 dB
• Common Mode Rejection Ratio (min): 75 dB
• Thd Plus Noise: 0.007 %
• Operating Supply Voltage: 22 V
• Supply Current: 0.145 mA
• Maximum Power Dissipation: 5000 mW
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Audio Load Resistance: 8 Ohms
• Dual Supply Voltage: +/- 11 V
• Input Signal Type: Differential
• Minimum Operating Temperature: - 40 C
• Output Signal Type: Differential, Single
• Supply Type: Single or Dual
• Supply Voltage (max): 36 V
• Supply Voltage (min): 10 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 935283479118

NXP Semiconductors
Table 10.
T
positive currents flow in the IC; typical values are given at V
UJA1079_2
Product data sheet
Symbol
V
V
V
V
V
Voltage source; pin V1
V
R
V
V
I
O(sc)
vj
hys(det)pon
uvd(LIN)
uvr(LIN)
hys(uvd)LIN
uvd(ctrl)Iext
O
uvd
uvr
(BAT-V1)
=
−
40 °C to +150
Static characteristics
Parameter
power-on detection hysteresis
voltage
LIN undervoltage detection
voltage
LIN undervoltage recovery
voltage
LIN undervoltage detection
hysteresis voltage
external current control
undervoltage detection
voltage
output voltage
resistance between pin BAT
and pin V1
undervoltage detection
voltage
undervoltage recovery
voltage
short-circuit output current
°
C; V
BAT
= 4.5 V to 28 V; V
…continued
All information provided in this document is subject to legal disclaimers.
Conditions
V
I
V
I
V
I
V
I
150 °C < T
V
I
150 °C < T
V
I
V
I
V
I
150 °C < T
V
I
regulator in saturation
90 %; V
90 %; V
70 %; V
90 %; V
90 %; V
I
BAT
V1
V1
V1
V1
V1
V1
V1
V1
V1
VEXCC
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
= −200 mA to −5 mA; C
= −200 mA to −5 mA; C
= −250 mA to −200 mA
= −250 mA to −5 mA
= −250 mA to −5 mA
= −250 mA to −5 mA; C
= −250 mA to −5 mA; C
= −250 mA to −5 mA
= −250 mA to −5 mA
> V
Rev. 02 — 27 May 2010
= 0 mA
V1
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
O(V1)nom
; R
= 5 V; V
= 5 V; V
= 5 V; V
= 5 V; V
= 5 V; V
= 3.3 V; V
= 3.3 V; V
= 3.3 V; V
= 5 V; V
vj
vj
vj
BAT
< 200 °C
< 200 °C
< 200 °C
LIN
= 500
= 14 V; unless otherwise specified.
= 5 V; RTHC = 0
= 3.3 V; RTHC = 0
= 5 V; RTHC = 1
= 5 V
= 3.3 V
BAT
BAT
BAT
BAT
BAT
BAT
BAT
BAT
BAT
= 5.5 V to 28 V
= 5.5 V to 28 V
= 5.5 V to 28 V
= 5.5 V to 5.75 V
= 5.75 V to 28 V
= 4.5 V to 5.5 V
Ω
= 4.5 V to 28 V
= 4.5 V to 28 V
= 4.5 V to 28 V
; all voltages are defined with respect to ground;
LIN
LIN
LIN
LIN
≥ 560 pF
≥ 220 pF
≥ 560 pF
≥ 220 pF
Min
200
5
5
25
5.9
4.9
4.85
4.75
4.5
4.85
3.234
3.201
2.97
-
3.5
3.025
−600
4.5
2.97
4.56
LIN core system basis chip
Typ
-
-
-
-
-
5
5
5
5
5
3.3
3.3
3.3
-
-
-
-
-
-
-
UJA1079
© NXP B.V. 2010. All rights reserved.
5.15
5.1
5.1
3.366
3.399
3.366
3.75
3.234
Max
-
5.3
5.5
300
7.5
5.1
5.1
3
4.75
3.135
4.9
−250
30 of 45
V
V
V
Unit
mV
V
V
mV
V
V
V
V
V
V
Ω
V
V
V
V
V
mA