MIG75Q202H TOSHIBA Semiconductor CORPORATION, MIG75Q202H Datasheet
MIG75Q202H
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MIG75Q202H Summary of contents
Page 1
... The electrodes are isolated from case. l High speed type IGBT : V CE (sat) t off = 2.8 µs (Max 0.21 µs (Max) l Package dimensions : TOSHIBA 2-110A1A l Weight : 520g Equivalent Circuit MIG75Q202H = 3.5 V (Max) 1 MIG75Q202H 2001-05-29 ...
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... AC 1 minute M5 Symbol Test Condition 1200V CEX (sat → 75A 600 (on Inductive load rr t off t c (off) 2 MIG75Q202H Symbol Ratings V 900 CC V 1200 CES 400 C T 150 j V 900 CC V 1200 CES 1200 140 C T 150 −20 ~ +100 T −40 ~ +125 ...
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... I FO (off 125° 125° off (OC Case temperature OTr UV ― UVr MIG75Q202H Min Typ. Max = 25°C ― ― 125°C ― ― 25°C ― 2.6 3.5 = 125°C ― 2.5 ― ― ― 1 ― ― 10 ― 1.4 2.2 ― 1.3 1.9 ― ...
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... Switching time test circuit & timing chart = 25°C) j Symbol Test Condition Inverter IGBT stage Inverter FRD stage R th (j-c) Brake IGBT stage Brake FRD stage R Compound is applied th (c-f) 4 MIG75Q202H Min Typ. Max Unit ― ― 0.312 ― ― 1.00 ° ― ― 0.892 ― ...
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... MIG75Q202H 2001-05-29 ...
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... MIG75Q202H 2001-05-29 ...
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... Package Dimensions: TOSHIBA 2-110A1A 7 MIG75Q202H Unit: mm 2001-05-29 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 8 MIG75Q202H 000707EAA 2001-05-29 ...