PK55GB80 Sanrex Corp., PK55GB80 Datasheet

PK55GB80

Manufacturer Part Number

PK55GB80

Description

800V Thyristor module

Manufacturer

Sanrex Corp.

Datasheet

1.PK55GB80.pdf (2 pages)

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¢Applications£

Power Thyristor/Diode Module PK55GB series are designed for various rectifier circuits

and power controls. For your circuit application. following internal connections and wide

voltage ratings up to 800V are available. and electrically isolated mounting base make

your mechanical design easy.

Various rectifiers

AC/DC motor drives

Heater controls

Light dimmers

Static switches

ÙMaximum Ratings

ÙElectrical Characteristics

ÎmarkThyristor and Diode part. No markThyristor part

SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com

Rth ¢ j-c£ÎThermal Impedance, max.

Symbol

dv—dt

di/dt 150 A/s

dv/dt 500V/s

di—dt

T ¢ RMS£

T(AV)

Tstg

T ¢ AV£

G ¢AV£

DRM

—V

TSM

FGM

RRM

tgt

RRM

RSM

DRM

FGM

RGM

ISO

THYRISTOR MODULE

55A, I

ÎRepetitive Peak Reverse Voltage

ÎNon-Repetitive Peak Reverse Voltage

ÎAverage On-State Current

ÎR.M.S. On-State Current

ÎSurge On-State Current

ÎI

ÎIsolation Breakdown Voltage (R.M.S.)

ÎOperating Junction Temperature

ÎStorage Temperature

ÎRepetitive Peak Reverse Current, max.

ÎPeak On-State Voltage, max.

T(RMS)

Mounting

Torque

Repetitive Peak Off-State Voltage

Peak Gate Power Dissipation

Average Gate Power Dissipation

Peak Gate Current

Peak Gate Voltage (Forward)

Peak Gate Voltage (Reverse)

Critical Rate of Rise of On-State Current

Repetitive Peak Off-State Current, max.

Gate Trigger Current/Voltage, max.

Non-Trigger Gate, Voltage. min.

Turn On Time, max.

Critical Rate of Rise of Off-State Voltage, min.

Holding Current, typ.

Lutching Current, typ.

Mass

( PD,PE,KK )

86A, I

TSM

Item

Mounting ¢M6£

Terminal¢M5£

1100A

Internal Configurations

Single phase, half wave, 180Ã conduction, Tc89Æ

Value for one cycle of surge current

A.C.1minute

Recommended Value 2.5-3.9¢25-40£

Recommended Value 1.5-2.5¢15-25£

at V

On-State Current 165A, Tj¹125Æ Inst. measurement

Tj¹25Æ|I

Tj¹125Æ|V

Tj¹125Æ, V

Tj¹25Æ

Junction to case

—

55GB

¹55A| I

¹100mA| Tj¹25Æ| V

cycle, 50Hz/60Hz, peak Value, non-repetitive

DRM

PK55GB40 PD55GB40

KK55GB40 PE55GB40

, single phase, half wave, Tj¹125Æ

¹100mA| Tj¹25Æ| V

¹1A|V

400

480

400

—

Conditions

DRM

¹6V

, Exponential wave.

—

DRM

—

Ratings

| dI

DRM

| dI

/dt¹0.1A / s

/ dt¹0.1A / s

PK55GB80 PD55GB80

KK55GB80 PE55GB80

800

960

800

16.5

µ40

1000/1100

4.7¢48£

2.7¢28£

Ratings

100 / 3

93.5MAX

5000

2500

1.35

0.25

0.50

150

170

500

100

´ 125

–

UL;E76102 ¢ M£

3-M5

110TAB

¢µfKB£

Unit

2- 6.5

mA / V

A/ s

V/ s

Æ / W

Unit

Related parts for PK55GB80

PK55GB80 Summary of contents

Page 1

... DRM G 2 ¹ — 2 Tj¹125Æ Exponential wave. D DRM 3 Tj¹25Æ Tj¹25Æ Junction to case UL;E76102 ¢ M£ 93.5MAX – 16 3-M5 110TAB A Unit Unit PK55GB80 PD55GB80 KK55GB80 PE55GB80 800 V 960 V 800 V Ratings Unit 1000/1100 5000 150 A/ s 2500 V µ ...

Page 2

¢ £ Æ Æ µ Æ ¢ £ ¢ £ ¢ ¹ „ ¹ „ ¹ „ ¹ „ ¹ „ { ¢ £ ¢ £ Æ ¢ £ € ¢ £ „ Æ Æ Æ Æ Æ ¢ £ ...

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