2MBI100N-060 Fuji Electric holdings CO.,Ltd, 2MBI100N-060 Datasheet

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2MBI100N-060

Manufacturer Part Number
2MBI100N-060
Description
IGBT MODULE ( N series )
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2MBI100N-060.pdf (4 pages)

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Part Number:
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Company:
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2MBI100N-060
600V / 100A 2 in one-package
· High speed switching
· Voltage drive
· Low inductance module structure
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector
current
Max. power dissipation
Operating temperature
Storage temperature
Isolation voltage
Screw torque
*
Item
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Diode forward on voltage
Reverse recovery time
Item
Thermal resistance
*
1 :
2
: This is the value which is defined mounting on the additional cooling fin with thermal compound
Electrical characteristics (at Tj=25°C unless otherwise specified)
Thermal resistance characteristics
Recommendable value : 2.5 to 3.5 N·m(M5)
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Features
Applications
Maximum ratings and characteristics
Continuous
1ms
Continuous
1ms
Symbol
V
V
I
I
-I
-I
P
T
T
V
Mounting *
Terminals *
Symbol
Rth(j-c)
Rth(j-c)
Rth(c-f)*
C
C
C
C
j
stg
I
I
V
V
C
C
C
t
t
t
t
V
t
CES
GES
C
is
Symbol
CES
GES
on
r
off
f
rr
pulse
GE(th)
CE(sat)
ies
oes
res
F
pulse
2
1
1
Characteristics
Min.
-40 to +125
AC 2500 (1min.)
Characteristics
Min.
Rating
–
–
–
–
–
4.5
–
–
–
–
–
–
–
–
–
–
+150
600
±20
100
200
100
200
400
3.5
3.5
Typ.
6600
1470
Typ.
670
–
–
0.05
–
–
–
–
0.6
0.2
0.6
0.2
–
–
Unit
V
V
A
A
A
A
W
°C
°C
V
N·m
N·m
Max.
15
Max.
1.0
7.5
2.8
–
–
–
1.2
0.6
1.0
0.35
3.0
0.3
0.31
0.7
–
V
V
V
V
V
V
f=1MHz
V
I
V
R
I
I
IGBT
Diode
the base to cooling fin
Conditions
C
F
F
GE
CE
CE
GE
GE
CE
CC
GE
G
=100A, V
=100A
Conditions
=100A
=24 ohm
C1
=0V, V
=0V, V
=20V, I
=15V, I
=0V
=10V
=300V
=±15V
Equivalent Circuit Schematic
GE
CE
C
C
GE
=100mA
=100A
=600V
=±20V
=0V
G1
¤
¤ Current control circuit
E1
C2E1
IGBT Module
Unit
°C/W
°C/W
°C/W
G2
mA
µA
V
V
pF
µs
V
µs
Unit
¤
E2
E2

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2MBI100N-060 Summary of contents

Page 1

... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 200 150 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : V Switching time vs. Collector current Vcc=300V, R =24 ohm 1000 100 Collector current : Ic [A] 200 150 100 [ [V] GE =±15V, Tj=25°C GE 1000 ...

Page 3

... Switching time vs. RG Vcc=300V, Ic=100A 1000 100 10 10 Gate resistance : R Forward current vs. Forward voltage V =0V GE 250 200 150 100 Emitter-Collector voltage V (Forward voltage : V Switching loss vs. Collector current Vcc=300V, R =24 ohm Collector current : Ic [A] =±15V, Tj=25°C 500 400 300 200 ...

Page 4

... Transient thermal resistance 1 0.1 0.01 0.001 0.01 Pulse width : P Outline Drawings 0.1 0 0.1 1 [sec.] W IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : V [V] CE mass : 180g 35 ...

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