MG400J2YS60A

Manufacturer Part NumberMG400J2YS60A
DescriptionTOSHIBA IGBT Module Silicon N Channel IGBT
ManufacturerTOSHIBA Semiconductor CORPORATION
MG400J2YS60A datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 3/9:

Maximum Ratings

Download datasheet (185Kb)Embed
PrevNext
(Ta = = = = 25°C)

Maximum Ratings

Stage
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Inverter
Forward current
Collector power dissipation (Tc = 25°C)
Control voltage (OT)
Control
Fault input voltage
Fault input current
Junction temperature
Storage temperature range
Module
Operation temperature range
Isolation voltage
Screw torque
Electrical Characteristics
1. Inverter Stage
Characteristics
Gate leakage current
Collector cut-off current
Gate-emitter cut-off voltage
Collector-emitter saturation voltage
Input capacitance
Turn-on delay time
Switching time
Turn-off time
Fall time
Reverse recovery time
Forward voltage
Note 1: Switching time test circuit & timing chart
(Tc = = = = 25°C)
2. Control
Characteristics
Fault output current
Over temperature
Fault output delay time
Symbol
V
CES
V
GES
DC
I
C
1 ms
I
CP
DC
I
F
1 ms
I
FM
P
C
V
D
VF
O
IF
O
T
j
T
stg
T
ope
V
isol
¾
= = = = 25°C)
(T
j
Symbol
Test Condition
= ±20 V, V
V
GE
CE
I
GES
= +10 V, V
V
GE
CE
= 600 V, V
I
V
CES
CE
GE
= 5 V, I
= 400 mA
V
V
GE (off)
CE
C
= 15 V,
V
GE
V
CE (sat)
= 400 A
I
C
= 10 V, V
C
V
ies
CE
GE
t
d (on)
= 300 V, I
= 400 A
V
t
CC
C
off
= ±15 V, R
V
GE
G
t
f
t
rr
= 400 A
V
I
F
F
Symbol
Test Condition
= 15 V
OC
V
GE
¾
OT
= 300 V, V
t
V
d (Fo)
CC
GE
3
MG400J2YS60A
Rating
Unit
600
V
±20
V
400
A
800
400
A
800
2160
W
20
V
20
V
20
mA
150
°C
-40~125
°C
-20~100
°C
2500 (AC 1 min)
V
3 (M5)
N・m
Min
Typ.
Max
= 0
¾
¾
+3/-4
= 0
¾
¾
100
= 0
¾
¾
1.0
5.0
6.5
8.0
Tj = 25°C
¾
1.8
2.1
Tj = 125°C
¾
¾
2.3
= 0, f = 1 MHz
¾
¾
3500
¾
0.10
1.00
¾
¾
2.00
= 7.5 W
¾
¾
0.50
(Note 1)
¾
¾
0.50
¾
1.8
2.2
Min
Typ.
Max
¾
¾
480
¾
100
125
= ±15 V
¾
¾
6.5
2002-09-06
Unit
mA
nA
mA
V
V
pF
ms
V
Unit
A
°C
ms