MG400J2YS60A

Manufacturer Part NumberMG400J2YS60A
DescriptionTOSHIBA IGBT Module Silicon N Channel IGBT
ManufacturerTOSHIBA Semiconductor CORPORATION
MG400J2YS60A datasheet
 
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Collector-emitter voltage V

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I
– V
C
CE
800
Common emitter
12 V
T j = 25°C
600
V GE = 20 V
15 V
400
200
0
0
1
2
3
4

Collector-emitter voltage V

(V)
CE
V
– V
CE
GE
12
Common emitter
T j = 25°C
10
8
6
4
I C = 600 A
2
200 A
400 A
0
0
5
10
15
Gate-emitter voltage V
(V)
GE
V
– V
CE
GE
12
Common emitter
T j = -40°C
10
8
6
4
I C = 600 A
2
400 A
0
0
5
10
15
Gate-emitter voltage V
(V)
GE
400
V GE = 20 V
300
200
10 V
100
9 V
8 V
0
5
0
1

Collector-emitter voltage V

12
Common emitter
T j = 125°C
10
8
6
4
2
0
20
0
Gate-emitter voltage V
800
Common emitter
V CE = 5 V
600
400
200
200 A
0
20
0
Gate-emitter voltage V
6
MG400J2YS60A
I
– V
C
CE
10 V
15 V
9 V
12 V
8 V
Common emitter
T j = 125°C
2
3
4
5
(V)
CE
V
– V
CE
GE
I C = 600 A
200 A
400 A
5
10
15
20
(V)
GE
I
– V
C
GE
25°C
T j = 125°C
-40°C
4
8
12
(V)
GE
2002-09-06