MG400J2YS60A

Manufacturer Part NumberMG400J2YS60A
DescriptionTOSHIBA IGBT Module Silicon N Channel IGBT
ManufacturerTOSHIBA Semiconductor CORPORATION
MG400J2YS60A datasheet
 
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Forward current I

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I
, t
– I
rr
rr
F
1000
t rr
100
I rr
Common cathode
V CC = 300 V
R G = 7.5 W
V GE = ±15 V
10
0
100
200
300

Forward current I

(A)
F
C – V
CE
1000000
100000
10000
1000
100
0.01
0.1
1
10
Collector-emitter voltage V
CE
Reverse bias SOA
1000
100
T j < = 125°C
R G = 7.5 W
V GE = ±15 V
10
0
200
400
Collector-emitter voltage V
CE
10
1
T j = 25°C
T j = 125°C
0.1
400
0
C ies
C oes
C res
100
1000
(V)
1
Tc = 25°C
0.1
0.01
0.001
600
0.001
(V)
8
MG400J2YS60A
E
– I
dsw
F
Common cathode
V CC = 300 V
R G = 7.5 W
T j = 25°C
V GE = ±15 V
T j = 125°C
100
200
300
400

Forward current I

(A)
F
R
– t
th
w
Diode stage
Transistor stage
0.01
0.1
1
10
Pulse width t
(s)
w
2002-09-06