2MBI150N-120 Fuji Electric holdings CO.,Ltd, 2MBI150N-120 Datasheet

2MBI150N-120

Manufacturer Part Number

2MBI150N-120

Description

IGBT MODULE ( N series )

Manufacturer

Fuji Electric holdings CO.,Ltd

Datasheet

1.2MBI150N-120.pdf (4 pages)

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Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2MBI150N-120

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SEMIKRON

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HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED

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2MBI150N-120

1200V / 150A 2 in one-package

· High speed switching

· Voltage drive

· Low inductance module structure

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector

current

Max. power dissipation

Operating temperature

Storage temperature

Isolation voltage

Screw torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Diode forward on voltage

Reverse recovery time

Item

Thermal resistance

1 :

2 :

: This is the value which is defined mounting on the additional cooling fin with thermal compound

Electrical characteristics (at Tj=25°C unless otherwise specified)

Thermal resistance characteristics

Recommendable value : 2.5 to 3.5 N·m(M5) or (M6)

Recommendable value : 3.5 to 4.5 N·m(M6)

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Applications

Maximum ratings and characteristics

Continuous

1ms

Continuous

1ms

Symbol

-I

Mounting *

Terminals *

Symbol

Rth(j-c)

Rth(c-f)*

stg

CES

GES

Symbol

CES

GES

off

pulse

GE(th)

CE(sat)

ies

oes

res

pulse

Characteristics

Min.

-40 to +125

AC 2500 (1min.)

Characteristics

Min.

Rating

–

4.5

–

+150

1200

1100

±20

150

300

150

300

3.5

4.5

24000

Typ.

8700

7740

Typ.

–

0.025

–

0.65

0.25

0.85

0.35

–

Unit

°C

N·m

Max.

2.0

7.5

3.3

–

1.2

0.6

1.5

0.5

3.0

0.35

Max.

0.11

0.33

–

f=1MHz

IGBT

Diode

the base to cooling fin

Conditions

=150A, V

=150A

Conditions

=150A

=5.6 ohm

=0V, V

=20V, I

=15V, I

=0V

=10V

=600V

=±15V

Equivalent Circuit Schematic

=150mA

=150A

=1200V

=±20V

=0V

¤ Current control circuit

C2E1

IGBT Module

Unit

°C/W

µA

µs

Unit

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2MBI150N-120 Summary of contents

Page 1

... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25° ...

Page 2

... Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 300 200 100 Collector-Emitter voltage : V Collector-Emitter vs. Gate-Emitter voltage Tj=25° Gate-Emitter voltage : V Switching time vs. Collector current Vcc=600V, R =5.6 ohm 1000 100 10 0 100 Collector current : Ic [A] 300 200 100 [ [V] GE =±15V, Tj=25°C ...

Page 3

... Switching time vs. RG Vcc=600V, Ic=150A 1000 100 Gate resistance : R Forward current vs. Forward voltage V =0V GE 300 200 100 Emitter-Collector voltage V (Forward voltage : V Switching loss vs. Collector current Vcc=600V, R =5.6 ohm 100 150 Collector current : Ic [A] =±15V, Tj=25°C 1000 800 600 400 ...

Page 4

... Transient thermal resistance 0.1 0.01 0.001 0.001 0.01 Pulse width : P Outline Drawings, mm 100 0.1 1 [sec.] W IGBT Module Capacitance vs. Collector-Emitter voltage Tj=25° Collector-Emitter voltage : V [V] CE mass : 370g 35 ...

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