BUT32V

Manufacturer Part NumberBUT32V
DescriptionNPN TRANSISTOR POWER MODULE
ManufacturerSTMicroelectronics
BUT32V datasheet
 


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HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW R
JUNCTION CASE
th
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
MOTOR CONTROL
SMPS & UPS
DC/DC & DC/AC CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
Collector-Emitter Voltage (V
CEV
V
Collector-Emitter Voltage (I
CEO(sus)
V
Emitter-Base Voltage (I
EBO
I
Collector Current
C
I
Collector Peak Current (t
CM
I
Base Current
B
I
Base Peak Current (t
BM
P
Total Dissipation at T
tot
V
Insulation Withstand Voltage (RMS) from All
isol
Four Terminals to External Heatsink
T
Storage Temperature
stg
T
Max. Operating Junction Temperature
j
February 2003
NPN TRANSISTOR POWER MODULE
INTERNAL SCHEMATIC DIAGRAM
= -5 V)
BE
= 0)
B
= 0)
C
= 10 ms)
p
= 10 ms)
p
o
= 25
C
c
BUT32V
Pin 4 not connected
ISOTOP
Value
Unit
400
V
300
V
7
V
80
A
120
A
16
A
24
A
250
W
2500
o
-55 to 150
C
o
150
C
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BUT32V Summary of contents