E110NS20FD

Manufacturer Part NumberE110NS20FD
ManufacturerSTMicroelectronics
E110NS20FD datasheet
 


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General features
Type
V
DSS
STE110NS20FD
200V
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
± 20V gate to source voltage rating
Low intrinsic capacitance
Fast body-drain diode:low trr, Qrr
Description
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of Power MOSFETs with
outstanding performances. The new patented
STrip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(ON)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
Applications
Switching application
Order codes
Part number
STE110NS20FD
May 2006
N-channel 200V - 0.022Ω - 110A - ISOTOP
MESH OVERLAY™ Power MOSFET
R
I
DS(on)
D
<0.024Ω
110A
Internal schematic diagram
Marking
E110NS20FD
Rev 3
STE110NS20FD
ISOTOP
Package
Packaging
ISOTOP
Tube
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www.st.com
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E110NS20FD Summary of contents