QM150DY-H MITSUBISHI, QM150DY-H Datasheet
QM150DY-H
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QM150DY-H Summary of contents
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... E2 C1 C2E1 80± 0.25 (12) (12) (12) 3–M5 LABEL MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE • I Collector current ........................ 150A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 17.5 1.3 9.5 20 ...
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... CE V =300V, I =150A, I =0.3A, I =–3. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 150 150 690 9 1500 –40~+150 – ...
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... BASE CURRENT ( =2. =25° 3.0 3.4 3.8 ( =200A =25° =125° (A) B MITSUBISHI TRANSISTOR MODULES QM150DY-HBK HIGH POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° COLLECTOR CURRENT I (A) C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL BE(sat CE(sat =200mA ...
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... CASE TEMPERATURE T REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM150DY-HBK INSULATED TYPE T =125° =– =–10A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125° ...
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... TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE 1.0 0.8 0.6 0.4 0.2 0 –3 –2 – TIME (s) MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL – FORWARD CURRENT QM150DY-HBK INSULATED TYPE =300V CC T =25°C I =300mA =125°C I =– – (A) F Feb.1999 ...