QM50DY-HB MITSUBISHI, QM50DY-HB Datasheet
QM50DY-HB
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QM50DY-HB Summary of contents
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... LABEL MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE • I Collector current .......................... 50A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 3– Tab#110, t=0.5 20 QM50DY-HB INSULATED TYPE File No. E80271 Dimensions Feb.1999 ...
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... CE V =300V, I =50A, I =100mA, I =–1. Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 310 3 500 –40~+150 –40~+125 2500 1 ...
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... I =150mA ( 3.4 3.8 4.2 ( =25° =125° =50A C I =25A C 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM50DY-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125° COLLECTOR CURRENT I (A) C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL BE(sat) ...
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... CASE TEMPERATURE T REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.2 0.6 7 COLLECTOR-EMITTER REVERSE VOLTAGE QM50DY-HB INSULATED TYPE I =–1. =–3.5A B2 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 1.0 1.4 1.8 2.2 – ...
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... CHARACTERISTIC (DIODE ) 2.0 1.6 1.2 0.8 0.4 0 –3 –2 – TIME (s) MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL – FORWARD CURRENT QM50DY-HB INSULATED TYPE =300V CC I =100mA B1 I =–1. =25° =125°C j – (A) F Feb.1999 ...