QM20KD-HB MITSUBISHI, QM20KD-HB Datasheet

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QM20KD-HB

Manufacturer Part Number
QM20KD-HB
Description
20A - transistor module for medium power switching use, insulated type
Manufacturer
MITSUBISHI
Datasheet

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Part Number:
QM20KD-HB
Manufacturer:
MITSUBISHI
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QM20KD-HB
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APPLICATION
Inverters, Servo drives, DC motor controllers, NC equipment, Welders.
QM20KD-HB
OUTLINE DRAWING & CIRCUIT DIAGRAM
R6
K P
A T
11
11 11 12.5 10.5 10.5 18.5
S
LABEL
R
U
18
110
93
BuP BvP BwP
BuN
V
18
BvN
BwN
15
W
N
8
2– 5.5
• I
• V
• h
• Insulated Type
• UL Recognized
R
A
S
T
C
FE
CEX
Tab#250,
t=0.8
Tab#110,
t=0.5
MITSUBISHI TRANSISTOR MODULES
Collector current .......................... 20A
Collector-emitter voltage ........... 600V
DC current gain............................. 250
Yellow Card No. E80276 (N)
MEDIUM POWER SWITCHING USE
BuN
K
BuP
U
P
QM20KD-HB
File No. E80271
BvN
BvP
V
INSULATED TYPE
Dimensions in mm
BwN
BwP
W
Feb.1999
N

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QM20KD-HB Summary of contents

Page 1

... BuN BvN BwN 110 LABEL MITSUBISHI TRANSISTOR MODULES QM20KD-HB MEDIUM POWER SWITCHING USE • I Collector current .......................... 20A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 250 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 2– 5.5 Tab#250, t=0.8 Tab#110, t=0 ...

Page 2

... Test conditions =600V, V =2V EB =600V, Emitter open =7V =20A, I =80mA B =20A (diode forward voltage) C =20A, V =2V CE =300V, I =20A, I =120mA,–I =0. = Test conditions = =150 C RRM j =30A QM20KD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings Unit 600 V 600 V 600 200 A Ratings Unit 800 V 900 V 220 ...

Page 3

... COLLECTOR CURRENT I BE SWITCHING TIME VS. COLLECTOR 3 T =25° =125° (A) COLLECTOR CURRENT I B QM20KD-HB INSULATED TYPE DC CURRENT GAIN VS. V =5. =2. =25° =125° (A) C SATURATION VOLTAGE T =25° =125° (A) C CURRENT (TYPICAL) T =25°C V =300V =125°C I =120mA =– ...

Page 4

... REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.4 0.8 1.2 COLLECTOR-EMITTER REVERSE VOLTAGE –V CEO QM20KD-HB INSULATED TYPE I =–0.5A B2 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 100 120 140 160 ( C) C 1.6 2.0 2.4 (V) Feb.1999 ...

Page 5

... TIME (s) MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL =300V =120mA =–400mA =25° =125° – FORWARD CURRENT I 0 QM20KD-HB INSULATED TYPE (A) F Feb.1999 ...

Page 6

... MEDIUM POWER SWITCHING USE ALLOWABLE SURGE (NON-REPETITIVE) 500 400 300 200 100 2.0 2.4 10 (V) CONDUCTION TIME (CYCLES AT 60H F ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 160 RESISTIVE, INDUCTIVE LOAD 140 120 100 (A) DC OUTPUT CURRENT I O QM20KD-HB INSULATED TYPE FORWARD CURRENT (A) O Feb.1999 ...

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