QM15TB-2HB

Manufacturer Part NumberQM15TB-2HB
Description15A - transistor module for medium power switching use, insulated type
ManufacturerMITSUBISHI
QM15TB-2HB datasheet
 


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ABSOLUTE MAXIMUM RATINGS

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ABSOLUTE MAXIMUM RATINGS

Symbol
Parameter
V
Collector-emitter voltage
CEX (SUS)
V
Collector-emitter voltage
CEX
V
Collector-base voltage
CBO
V
Emitter-base voltage
EBO
I
Collector current
C
–I
Collector reverse current
C
P
Collector dissipation
C
I
Base current
B
Surge collector reverse current
–I
CSM
(forward diode current)
T
Junction temperature
j
T
Storage temperature
stg
V
Isolation voltage
iso
Mounting torque
Weight
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
I
Collector cutoff current
CEX
I
Collector cutoff current
CBO
I
Emitter cutoff current
EBO
V
Collector-emitter saturation voltage
CE (sat)
V
Base-emitter saturation voltage
BE (sat)
–V
Collector-emitter reverse voltage
CEO
h
DC current gain
FE
t
on
t
Switching time
s
t
f
R
th (j-c) Q
Thermal resistance
(junction to case)
R
th (j-c) R
Contact thermal resistance
R
th (c-f)
(case to fin)
(Tj=25 C, unless otherwise noted)
Conditions
I
=1A, V
=2V
C
EB
V
=2V
EB
Emitter open
Collector open
DC
DC (forward diode current)
T
=25 C
C
DC
Peak value of one cycle of 60Hz (half wave)
Charged part to case, AC for 1 minute
Mounting screw M5
Typical value
(Tj=25 C, unless otherwise noted)
Test conditions
V
=1000V, V
=2V
CE
EB
V
=1000V, Emitter open
CB
V
=7V
EB
I
=15A, I
=60mA
C
B
–I
=15A (diode forward voltage)
C
I
=15A, V
=3.0V
C
CE
V
=600V, I
=15A, I
=90mA, I
=–0.3A
CC
C
B1
B2
Transistor part (per 1/6 module)
Diode part (per 1/6 module)
Conductive grease applied (per 1/6 module)
MITSUBISHI TRANSISTOR MODULES
QM15TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Ratings
1000
1000
1000
7
15
15
150
1
150
–40~+150
–40~+125
2500
1.47~1.96
15~20
kg·cm
230
Limits
Min.
Typ.
Max.
1.0
1.0
50
3.0
3.5
1.8
250
2.0
10
3.0
0.8
2.0
0.35
Unit
V
V
V
V
A
A
W
A
A
C
C
V
N·m
g
Unit
mA
mA
mA
V
V
V
s
s
s
C/ W
C/ W
C/ W
Feb.1999