QM15TB-2HB

Manufacturer Part NumberQM15TB-2HB
Description15A - transistor module for medium power switching use, insulated type
ManufacturerMITSUBISHI
QM15TB-2HB datasheet
 
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SWITCHING TIME VS. BASE CURRENT (TYPICAL)

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SWITCHING TIME VS. BASE
CURRENT (TYPICAL)
2
V
=600V
CC
1
10
I
=90mA
B1
t
s
7
I
=15A
C
T
=25°C
5
j
4
T
=125°C
j
3
2
t
f
0
10
7
5
4
3
2
–1
0
10
2
3 4 5 7
10
2 3
4 5 7
BASE REVERSE CURRENT –I
(A)
B2
FORWARD BIAS SAFE OPERATING AREA
2
10
7
100µs
5
200µs
3
2
10
1
7
5
3
2
0
10
7
T
=25°C
C
5
NON–REPETITIVE
3
2
10
–1
0
1
2
10
10
10
2
3
4
5
7
2
3
4
5
7
2
3
4
5
COLLECTOR-EMITTER VOLTAGE V
CE
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTIC (TRANSISTOR)
0
1
10
10
2
3
4
5
7
1.0
0.8
0.6
0.4
0.2
0
–3
–2
–1
10
10
10
2
3
4
5
7
2
3
4
5
7
2
3
4
5
TIME (s)
MITSUBISHI TRANSISTOR MODULES
MEDIUM POWER SWITCHING USE
REVERSE BIAS SAFE OPERATING AREA
32
28
24
20
16
12
8
4
0
1
0
200
10
COLLECTOR-EMITTER VOLTAGE V
DERATING FACTOR OF F. B. S. O. A.
100
90
80
70
60
50
COLLECTOR
DISSIPATION
40
30
20
10
0
3
10
0
20
40
60
7
(V)
CASE TEMPERATURE T
REVERSE COLLECTOR CURRENT VS.
COLLECTOR-EMITTER REVERSE
VOLTAGE (DIODE FORWARD
CHARACTERISTICS) (TYPICAL)
2
10
T
=25°C
j
7
T
=125°C
j
5
4
3
2
1
10
7
5
4
3
2
0
10
0
0.4
0.8
7
10
COLLECTOR-EMITTER REVERSE VOLTAGE
QM15TB-2HB
INSULATED TYPE
I
=–2.5A
B2
T
=125°C
j
400
600
800
1000
(V)
CE
SECOND
BREAKDOWN
AREA
80
100 120
140
160
( C)
C
1.2
1.6
2.0
2.4
–V
(V)
CEO
Feb.1999