APT10050JN Advanced Power Technology, APT10050JN Datasheet

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APT10050JN

Manufacturer Part Number
APT10050JN
Description
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer
Advanced Power Technology
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
APT10050JN
Manufacturer:
APT
Quantity:
25
Part Number:
APT10050JN
Manufacturer:
APT
Quantity:
20 000
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
POWER MOS IV
G
R
V
Symbol
Symbol
Symbol
T
I
I
BV
DM
DS
D
GS
R
V
J
R
I
I
V
,T
(ON)
DSS
GSS
P
T
DSS
I
GS
D
, l
(ON)
DSS
(TH)
D
L
CS
STG
JC
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
LM
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
On State Drain Current
(V
Drain-Source On-State Resistance
(V
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage
Characteristic
Junction to Case
Case to Sink
GS
DS
GS
D
S
> I
= 0V, I
= 10V, 0.5 I
D
(ON) x R
D
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
= 250 A)
ISOTOP
D
DS
[Cont.])
(ON) Max, V
1
®
2
and Inductive Current Clamped
(V
C
DS
®
C
= 25 C
= V
= 25 C
GS
GS
GS
2
DS
DS
= 10V)
Bend, Oregon 97702 -1035
F-33700 Merignac - France
= 30V, V
, I
= V
= 0.8 V
D
= 2.5mA)
APT10050JN 1000V 20.5A 0.50
DSS
, V
DSS
DS
SINGLE DIE ISOTOP
GS
, V
= 0V)
= 0V)
GS
= 0V, T
All Ratings: T
APT10050JN
APT10050JN
APT10050JN
"UL Recognized" File No. E145592 (S)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
C
= 25 C unless otherwise specified.
1000
20.5
MIN
MIN
2
-55 to 150
4.16
TYP
TYP
0.06
520
300
30
®
10050JN
PACKAGE
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
1000
20.5
APT
82
1000
MAX
MAX
0.24
0.50
250
100
4
Ohms
Amps
Watts
Amps
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
UNIT
C/W
nA
C
A

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APT10050JN Summary of contents

Page 1

... High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) CS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord APT10050JN 1000V 20.5A 0.50 "UL Recognized" File No. E145592 (S) ® SINGLE DIE ISOTOP All Ratings ...

Page 2

... [Cont.], dl /dt = 100A (Measured From Drain Terminal to Center of Die.) (Measured From Source Terminals to Source Bond Pads 1MHz RECTANGULAR PULSE DURATION (SECONDS) APT10050JN MIN TYP MAX 5425 6500 710 995 230 350 235 370 24 36 DSS 107 160 15 30 ...

Page 3

... APT10050JN = 10V 100 200 300 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS + - +125 +125 > (ON (ON)MAX. 10 250 SEC. PULSE TEST + <0.5 % DUTY CYCLE - GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 ...

Page 4

... H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) * Source 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT10050JN C iss C oss C rss . DRAIN-TO-SOURCE VOLTAGE (VOLTS =+150 =+ =-55 C 0.4 0.8 1 ...

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