APT40M75JN Advanced Power Technology, APT40M75JN Datasheet

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APT40M75JN

Manufacturer Part Number
APT40M75JN
Description
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Manufacturer
Advanced Power Technology
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT40M75JN
Manufacturer:
APT
Quantity:
25
Part Number:
APT40M75JN
Manufacturer:
APT
Quantity:
15 500
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
THERMAL CHARACTERISTICS
USA
405 S.W. Columbia Street
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
POWER MOS IV
G
R
V
Symbol
Symbol
Symbol
T
I
I
BV
DM
DS
D
GS
R
V
J
R
I
I
V
,T
(ON)
DSS
GSS
P
T
DSS
I
GS
D
, l
(ON)
DSS
(TH)
D
L
CS
STG
JC
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
LM
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage
(V
On State Drain Current
(V
Drain-Source On-State Resistance
(V
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage
Characteristic
Junction to Case
Case to Sink
GS
DS
GS
D
S
> I
= 0V, I
= 10V, 0.5 I
D
(ON) x R
D
(Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)
= 250 A)
ISOTOP
D
DS
[Cont.])
(ON) Max, V
1
®
2
and Inductive Current Clamped
(V
C
DS
®
C
= 25 C
= V
= 25 C
GS
GS
GS
2
DS
DS
= 10V)
Bend, Oregon 97702 -1035
F-33700 Merignac - France
= 30V, V
, I
= V
= 0.8 V
D
= 2.5mA)
APT40M75JN 400V 56.0A 0.075
APT40M90JN 400V 51.0A 0.090
DSS
, V
DSS
DS
SINGLE DIE ISOTOP
GS
, V
= 0V)
= 0V)
GS
= 0V, T
All Ratings: T
APT40M75JN
APT40M90JN
APT40M75JN
APT40M90JN
APT40M75JN
APT40M90JN
"UL Recognized" File No. E145592 (S)
C
= 125 C)
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
C
= 25 C unless otherwise specified.
40M75JN
MIN
MIN
400
400
56
51
2
APT
400
224
56
-55 to 150
0.06
4.16
TYP
TYP
520
300
30
®
40M90JN
PACKAGE
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
APT
400
204
51
0.075
0.090
1000
MAX
MAX
0.24
250
100
4
Ohms
Amps
Watts
Amps
UNIT
W/ C
UNIT
Volts
Volts
Volts
Volts
UNIT
C/W
nA
C
A

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APT40M75JN Summary of contents

Page 1

... CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord APT40M75JN 400V 56.0A 0.075 APT40M90JN 400V 51.0A 0.090 "UL Recognized" File No. E145592 (S) ® SINGLE DIE ISOTOP ...

Page 2

... 25V MHz V = 10V 0 [Cont 15V 0 [Cont 0.6 G APT40M75JN APT40M90JN APT40M75JN APT40M90JN 0V [Cont.]) [Cont.], dl /dt = 100A [Cont.], dl /dt = 100A (Measured From Drain Terminal to Center of Die.) (Measured From Source Terminals to Source Bond Pads 1MHz RECTANGULAR PULSE DURATION (SECONDS) APT40M75/40M90JN MIN TYP MAX 5630 ...

Page 3

... FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 100 - > (ON (ON)MAX. 80 250 SEC. PULSE TEST + <0.5 % DUTY CYCLE +125 +125 - + GATE-TO-SOURCE VOLTAGE (VOLTS) GS FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 60 50 APT40M75JN 40 APT40M90JN 100 T , CASE TEMPERATURE ( C) C FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2 0.5 I [Cont 10V GS 2.0 1.5 1 ...

Page 4

... APT40M75JN APT40M90JN OPERATION HERE 100 LIMITED (ON) APT40M75JN 50 APT40M90JN =+ =+150 C .5 SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA [Cont =80V =200V =320V 100 200 300 Q , TOTAL GATE CHARGE (nC) g FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE APT Reserves the right to change, without notice, the specifications and information contained herein. ...

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