TE53N50E Motorola, TE53N50E Datasheet

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TE53N50E

Manufacturer Part Number
TE53N50E
Description
Search -----> MTE53N50E
Manufacturer
Motorola
Datasheet
www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Designer's
ISOTOP
Power Field Effect Transistor
N–Channel Enhancement–Mode Silicon Gate
withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain–to–source diode
with fast recovery time. Designed for high voltage, high speed
switching applications such as power supplies, PWM motor
controls and other inductive loads, the avalanche energy capability
is specified to eliminate the guesswork in designs where inductive
loads are switched and offer additional safety margin against
unexpected voltage transients.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
ISOTOP is a trademark of SGS–THOMSON Microelectronics.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
MAXIMUM RATINGS
Motorola TMOS Power MOSFET Transistor Device Data
Drain–Source Voltage
Drain–Gate Voltage (R GS = 1.0 M )
Gate–Source Voltage — Continuous
Gate–Source Voltage
Drain Current — Continuous
Drain Current
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy
RMS Isolation Voltage
Thermal Resistance — Junction to Case
Thermal Resistance
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds
This advanced high voltage TMOS E–FET is designed to
Motorola, Inc. 1996
2500 V RMS Isolated Isotop Package
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
Very Low Internal Parasitic Inductance
I DSS and V DS(on) Specified at Elevated Temperature
U. L. Recognized, File #E69369
Derate above 25 C
(V DD = 25 Vdc, V GS = 10 Vdc, I L = 53 Apk, L = 0.29 mH, R G =25 )
— Continuous @ 100 C
— Single Pulse (t p
— Junction to Ambient
— Non–Repetitive (t p
(T C = 25 C unless otherwise noted)
TMOS E-FET
Data Sheet
10 s)
Rating
10 ms)
.
G
D
S
Symbol
T J , T stg
V GSM
V DGR
V DSS
R JC
V ISO
R JA
V GS
E AS
I DM
P D
T L
I D
I D
MTE53N50E
R DS(on) = 0.080 OHM
TMOS POWER FET
Motorola Preferred Device
– 40 to 150
53 AMPERES
1
Value
2500
500 VOLTS
3.70
0.28
62.5
500
500
210
460
400
260
53
33
SOT–227B
1. Source
2. Gate
3. Drain
4. Source 2
Order this document
20
40
2
by MTE53N50E/D
4
Watts
W/ C
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Vac
C/W
3
mJ
C
C
1

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TE53N50E Summary of contents

Page 1

... Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 Data Sheet . Rating 10 ms Order this document by MTE53N50E/D MTE53N50E Motorola Preferred Device TMOS POWER FET 53 AMPERES 500 VOLTS R DS(on) = 0.080 OHM SOT– ...

Page 2

... MTE53N50E ELECTRICAL CHARACTERISTICS OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 500 Vdc Vdc 500 Vdc Vdc 125 C) Gate–Body Leakage Current ( CHARACTERISTICS (1) Gate Threshold Voltage ( 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain– ...

Page 3

... DRAIN CURRENT (AMPS) Figure 4. On–Resistance versus Drain Current and Gate Voltage 100000 125 C 10000 100 C 1000 100 100 200 300 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current versus Voltage MTE53N50E – 100 120 400 500 3 ...

Page 4

... MTE53N50E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...

Page 5

... The energy rating decreases non–linearly with an in- crease of peak current in avalanche and peak junction temperature 0.5 0.6 0.7 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current MTE53N50E 250 d(off d(on GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.9 1 1.1 ...

Page 6

... MTE53N50E 1000 SINGLE PULSE 100 10 1 0.1 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) www.DataSheet4U.com Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE 0.0001 1.0E–05 6 SAFE OPERATING AREA 100 DS(on) LIMIT ...

Page 7

... Maximum screw torque: 1.5 Nm Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS " 0.2 Nm SOT–227B MTE53N50E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982 CONTROLLING DIMENSION: MILLIMETERS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 31.50 31.70 1.240 1.248 B 7.80 8 ...

Page 8

... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–81–3521–8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MTE53N50E/D* Motorola TMOS Power MOSFET Transistor Device Data MTE53N50E/D ...

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