BSM181R

Manufacturer Part NumberBSM181R
DescriptionSIMOPAC Module (Power module Single switch N channel Enhancement mode)
ManufacturerSiemens Semiconductor Group
BSM181R datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
Page 2/7:

Static Characteristics

Download datasheet (200Kb)Embed
PrevNext
Electrical Characteristics
T
at
= 25 ˚C, unless otherwise specified.
j
Parameter

Static Characteristics

Drain-source breakdown voltage
V
I
= 0,
= 0.25 mA
GS
D
Gate threshold voltage
V
=
V
,
I
= 1 mA
DS
GS
D
Zero gate voltage drain current
V
V
= 800 V,
= 0
DS
GS
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
V
= 20 V,
= 0
GS
DS
Drain-source on-state resistance
V
I
= 10 V,
= 23 A
GS
D
Dynamic Characteristics
Forward transconductance
V
I
R
I
2
,
= 23 A
DS
D
DS(on)max.
D
Input capacitance
V
= 0,
V
= 25 V,
f
= 1 MHz
GS
DS
Output capacitance
V
V
f
= 0,
= 25 V,
= 1 MHz
GS
DS
Reverse transfer capacitance
V
V
f
= 0,
= 25 V,
= 1 MHz
GS
DS
t
(t
t
Turn-on time
=
+
on
on
d (on)
V
= 400 V,
V
= 10 V
CC
GS
I
= 23 A,
R
= 3.3
D
GS
t
(t
t
Turn-off time
=
+
off
off
d (off)
V
V
= 400 V,
= 10 V
CC
GS
I
= 23 A,
R
= 3.3
D
GS
Semiconductor Group
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
i i ss
C
oss
C
rss
t
)
t
r
d (on)
t
r
t
)
t
f
d (off)
t
f
58
BSM 181
BSM 181 R
Values
min.
typ.
max.
800
2.1
3.0
4.0
50
250
300
1000
10
100
0.18
0.24
15
25
24
32
1.3
2.0
0.5
0.8
60
30
370
70
Unit
V
A
nA
S
nF
ns