MG200J6ES60 TOSHIBA Semiconductor CORPORATION, MG200J6ES60 Datasheet
MG200J6ES60
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MG200J6ES60 Summary of contents
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... TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 (600V/200A 6in1) High Power Switching Applications Motor Control Applications · Integrates inverter power circuit single package. The electrodes are isolated from case. · Low thermal resistance · 1.6 V (typ.) · CE (sat) Equivalent Circuit P CN-1:7 ...
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... Package Dimensions: 2-123B1A (U) 7. TH1 (X) 2 MG200J6ES60 4. G (V) 8. TH2 4. E (L) 2002-01-24 ...
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... Symbol Test Condition ITM = 0.2 mA R25 Tc = 25°C/Tc = 85°C B25/85 Inverter IGBT stage R th (j-c) Inverter FRD stage ¾ (c-f) 3 MG200J6ES60 Rating Unit 600 V ±20 V 200 A 400 200 A 400 1000 W 150 °C -40~125 °C 2500 (AC 1 min (M5) N・m Min Typ ...
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... Switching Time Test Circuit & Timing Chart 10 10 (on) 4 MG200J6ES60 90% 90% 10 (off) f 2002-01-24 ...
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... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 5 MG200J6ES60 000707EAA 2002-01-24 ...