MG600Q1US59A TOSHIBA Semiconductor CORPORATION, MG600Q1US59A Datasheet
MG600Q1US59A
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MG600Q1US59A Summary of contents
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TOSHIBA IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications High input impedance · · High speed 0.3 µs (max) f Inductive load · Low saturation voltage (sat) The electrodes are isolated ...
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Electrical Characteristics Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Turn-on time Switching time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance ...
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V Rank > CE (sat (sat) Rank Symbol Min 21 1.80 22 1.90 23 2.00 24 2.10 25 2.20 26 2.30 27 2.40 < Mark Position > Mark position 24D < V Rank > ...
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I – 900 Common emitter 800 25°C 700 600 20 500 400 300 10 200 100 Collector-emitter voltage V (V) CE ...
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I – 600 Common cathode 500 400 300 125 200 100 - 0.5 1 1.5 2 Forward voltage V (V) F Switching time – 10000 600 ...
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– 1000 100 600 ± 25° 125° 100 ...
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Short circuit soa 10000 1000 100 ± 125° 200 400 600 800 1000 Collector-emitter voltage V CE 1200 1400 (V) 7 MG600Q1US61 2002-10-04 ...
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RESTRICTIONS ON PRODUCT USE · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...