MPIC2113P Motorola, MPIC2113P Datasheet

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MPIC2113P

Manufacturer Part Number
MPIC2113P
Description
High and low side driver
Manufacturer
Motorola
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Power Products Division
Advance Information
HIGH AND LOW SIDE DRIVER
with independent high and low side referenced output channels. Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction.
Logic inputs are compatible with standard CMOS or LSTTL outputs. The output
drivers feature a high pulse current buffer stage designed for minimum driver
cross–conduction. Propagation delays are matched to simplify use in high frequen-
cy applications. The floating channel can be used to drive an N–channel power
MOSFET or IGBT in the high side configuration which operates from 10 to 600
volts.
V OFFSET
I O+/–
V OUT
t on/off (typical)
Delay Matching
This document contains information on a new product. Specifications and information herein are subject
to change without notice.
Motorola TMOS Power MOSFET Transistor Device Data
Motorola, Inc. 1996
The MPIC2113 is a high voltage, high speed, power MOSFET and IGBT driver
Floating Channel Designed for Bootstrap Operation
Fully Operational to +600 V
Tolerant to Negative Transient Voltage
dV/dt Immune
Gate Drive Supply Range from 10 to 20 V
Undervoltage Lockout for Both Channels
Separate Logic Supply
Operating Supply Range from 5 to 20 V
Logic and Power Ground Operating Offset Range from –5 to +5 V
CMOS Schmitt–triggered Inputs with Pull–down
Cycle by Cycle Edge–triggered Shutdown Logic
Matched Propagation Delay for Both Channels
Outputs In Phase with Inputs
PRODUCT SUMMARY
10 HIN
11
12 LIN
13 V SS
14
8
9
14 LEADS PDIP MPIC2113P
V DD
SD
600 V MAX
2 A/2 A
10 – 20 V
120 & 94 ns
10 ns
COM
V CC
HO
V B
V S
LO
7
6
5
4
3
2
1
PIN CONNECTIONS
(TOP VIEW)
10
11
12
13
14
15
16
16 LEADS SOIC (WIDE BODY)
9
V DD
HIN
SD
LIN
V SS
MPIC2113DW
MPIC2113DW
ORDERING INFORMATION
MPIC2113P
MPIC2113
Device
14
PLASTIC PACKAGE
16
PLASTIC PACKAGE
COM
HIGH AND LOW
V CC
SIDE DRIVER
HO
CASE 646–06
CASE 751G–02
V B
V S
LO
SOIC – WIDE
DW SUFFIX
P SUFFIX
1
8
7
6
5
4
3
2
1
Order this document
1
by MPIC2113/D
SOIC WIDE
Package
PDIP
1

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MPIC2113P Summary of contents

Page 1

... HIN LIN COM LEADS PDIP MPIC2113P This document contains information on a new product. Specifications and information herein are subject to change without notice. Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1996 PIN CONNECTIONS (TOP VIEW HIN LIN LEADS SOIC (WIDE BODY) ...

Page 2

... /dt (14 Lead DIP (16 SOIC–WIDE) – (14 Lead DIP (16 SOIC–WIDE stg Motorola TMOS Power MOSFET Transistor Device Data DETECT LO DELAY COM Min Max Unit –0.3 –0.3 625 625 – – – +0 –0 –0 –0 – +0.3 –0.3 –0.3 –0.3 – ...

Page 3

... Shutdown Propagation Delay @ 600 V Turn–On Rise Time @ 1000 pF Turn–Off Fall Time @ 1000 pF Delay Matching, HS & LS Turn–On/Off HIN HIN SD SD LIN LIN Motorola TMOS Power MOSFET Transistor Device Data Symbol Min QBS I QCC I QDD I IN+ I IN– V BSUV+ 7.5 V BSUV– ...

Page 4

... Figure 1. Input / Output Timing Diagram 50 90% LO Figure 3. Shutdown Waveform Definitions 4 Lead Description HIN 50% 50% LIN off t on 90% 90 10% 10% Figure 2. Switching Time Waveform Definitions HIN 50% 50% LIN LO HO 10% MT 90% LO Figure 4. Delay Matching Waveform Definitions Motorola TMOS Power MOSFET Transistor Device Data ...

Page 5

... SEATING PLANE –A– –B– 16X 0.010 (0.25 14X K Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS CASE 646–06 ISSUE 0.010 (0.25 –T– M SEATING PLANE CASE 751G–02 ISSUE A MPIC2113 NOTES: 1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE POSITION AT SEATING PLANE AT MAXIMUM MATERIAL CONDITION ...

Page 6

... Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “ ...

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