BFP620 | |
|---|---|
| Manufacturer Part Number | BFP620 |
| Manufacturer | Infineon Technologies AG |
| BFP620 datasheet |
|
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NPN Silicon Germanium RF Transistor
High gain low noise RF transistor
Provides outstanding performance
for a wide range of wireless applications
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz
Outstanding noise figure F = 1.3 dB at 6 GHz
Maximum stable gain
G
= 21.5 dB at 1.8 GHz
ms
G
= 11 dB at 6 GHz
ma
Gold metallization for extra high reliability
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Marking
BFP620
R2s
Maximum Ratings
Parameter
Collector-emitter voltage
T
> 0 °C
A
T
0 °C
A
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
1)
Total power dissipation
T
95°C
S
Junction temperature
Ambient temperature
Storage temperature
1 T
S is measured on the collector lead at the soldering point to the pcb
Thermal Resistance
Parameter
1)
Junction - soldering point
Pin Configuration
1=B
2=E
3=C
4=E
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
1
BFP620
3
4
2
1
VPS05605
Package
-
-
SOT343
Value
Unit
V
2.3
2.1
7.5
7.5
1.2
80
mA
3
185
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
K/W
300
Apr-21-2004
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BFP620 Summary of contents |
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