BG3123R Infineon Technologies AG, BG3123R Datasheet

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BG3123R

Manufacturer Part Number
BG3123R
Description
Manufacturer
Infineon Technologies AG
Datasheet
DUAL N-Channel MOSFET Tetrode
BG3123
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
Type
BG3123
BG3123R***
Two gain controlled input stages for UHF
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
and VHF -tuners e.g. (NTSC, PAL)
BG3123R
Package
SOT363
SOT363
1=G1*
1=G1**
2=G2
2=S
AGC
HF
Input
1
Pin Configuration
3=D*
3=D**
Symbol
V
I
P
T
T
R
D
G1
I
V
stg
ch
DS
tot
G1/2SM
V
G1/G2S
GG
G2
G1
4=D**
4=D*
6
GND
5=S
5=G2
-55 ... 150
5
Value
Drain
200
150
25
20
8
1
6
4
6=G1**
6=G1*
HF Output
+ DC
Feb-27-2004
EHA07461
BG3123...
1
VPS05604
Marking
KOs
KRs
2
Unit
V
mA
V
mW
°C
3

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BG3123R Summary of contents

Page 1

... Improved cross modulation at gain reduction BG3123 BG3123R ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution! Type Package BG3123 SOT363 BG3123R*** SOT363 * For amp for amp. B *** Target Data 180° rotated tape loading orientation available Maximum Ratings Parameter Drain-source voltage Continuous drain current amp ...

Page 2

Thermal Resistance Parameter 1) Channel - soldering point Electrical Characteristics Parameter DC Characteristics Drain-source breakdown voltage µ G1S G2S Gate1-source breakdown voltage + mA ...

Page 3

Electrical Characteristics Parameter AC Characteristics Forward transconductance amp. A amp. B Gate1 input capacitance MHz, amp MHz, amp. B Output capacitance MHz, amp ...

Page 4

Total power dissipation P amp. A 300 mW 200 150 100 Drain current G2S amp ...

Page 5

Output characteristics 4V Parameter in V G2S G1S amp Gate 1 current G1S V ...

Page 6

Gate 1 forward transconductance 5V G2S amp Drain current G1S V = ...

Page 7

Drain current amp 5V 4V G2S G1 (connected =gate1 supply voltage ...

Page 8

Crossmodulation V = (AGC) unw amp.A 120 dBµV 100 Cossmodulation test circuit R GEN 50 Ohm Crossmodulation amp.B ...

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