BG3123R | |
|---|---|
| Manufacturer Part Number | BG3123R |
| Manufacturer | Infineon Technologies AG |
| BG3123R datasheets |
|
Availability: In stock
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
- We ship worldwide using main international couriers like FedEx, DHL, UPS, TNT, EMS. We can also use client's freight account. Other shipping methods can be discussed. We do best to meet your needs!
Payment terms
- For new client payment term is payment in advance. At this moment we accept 3 payment methods: wire transfer, PayPal and Western Union. Credit card payment is under constrution and will be introduced soon. Escrow service is acceptable. Net terms for regular customers is not a problem. Working with us is totally safe for you.
- If you still have any questions - please contact us
PrevNext
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
BG3123
BG3123R
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Package
BG3123
SOT363
BG3123R***
SOT363
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
G2
AGC
G1
HF
Input
R
G1
V
GG
Pin Configuration
1=G1*
2=G2
3=D*
4=D**
1=G1**
2=S
3=D**
4=D*
Symbol
V
DS
I
D
I
G1/2SM
V
G1/G2S
P
tot
T
stg
T
ch
1
BG3123...
4
5
6
3
2
1
VPS05604
Drain
HF Output
+ DC
GND
EHA07461
Marking
5=S
6=G1**
KOs
5=G2
6=G1*
KRs
Value
Unit
8
V
mA
25
20
1
6
V
200
mW
°C
-55 ... 150
150
Feb-27-2004
Related parts for BG3123R | |||
|---|---|---|---|
| Part Number | Description | Manufacturer | Datasheet |
|
|
DUAL N-Channel MOSFET Tetrode | INFINEON [Infineon Technologies AG] |
|
|
|
Infineon Technologies AG |
|
|
|
|
Infineon Technologies AG |
|
|
|
|
DUAL N-Channel MOSFET Tetrode | Infineon Technologies AG |
|
|
|
SOT343-4/Silicon Germanium Wide Band Low Noise Amplifier with 2 kV ESD Prot | Infineon Technologies AG | |
|
|
Infineon Technologies AG |
|
|
|
|
Infineon Technologies AG |
|
|
|
|
Infineon Technologies AG |
|
|
|
|
Si-MMIC-amplifier in SIEGET 25-technologie | Infineon Technologies AG |
|
|
|
Negative Voltage Generator for biasing GaAs FET and Power Amplifier | Infineon Technologies AG |
|
|
|
Infineon Technologies AG |
|
|
|
|
Infineon Technologies AG | ||
|
|
Infineon Technologies AG |
|
|
|
|
Infineon Technologies AG | ||
|
|
Infineon Technologies AG | ||
BG3123R Summary of contents |
|---|