BG3123R

Manufacturer Part NumberBG3123R
ManufacturerInfineon Technologies AG
BG3123R datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
Page 1/8

Download datasheet (184Kb)Embed
Next
DUAL N-Channel MOSFET Tetrode
Two gain controlled input stages for UHF
and VHF -tuners e.g. (NTSC, PAL)
Optimized for UHF (amp. B) and VHF (amp. A)
Integrated gate protection diodes
High AGC-range, low noise figure, high gain
Improved cross modulation at gain reduction
BG3123
BG3123R
ESD : E lectro s tatic d ischarge sensitive device, observe handling precaution!
Type
Package
BG3123
SOT363
BG3123R***
SOT363
* For amp. A; ** for amp. B
*** Target Data
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
amp. A
amp. B
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
Storage temperature
Channel temperature
G2
AGC
G1
HF
Input
R
G1
V
GG
Pin Configuration
1=G1*
2=G2
3=D*
4=D**
1=G1**
2=S
3=D**
4=D*
Symbol
V
DS
I
D
I
G1/2SM
V
G1/G2S
P
tot
T
stg
T
ch
1
BG3123...
4
5
6
3
2
1
VPS05604
Drain
HF Output
+ DC
GND
EHA07461
Marking
5=S
6=G1**
KOs
5=G2
6=G1*
KRs
Value
Unit
8
V
mA
25
20
1
6
V
200
mW
°C
-55 ... 150
150
Feb-27-2004

BG3123R Summary of contents