UPA802T

Manufacturer Part NumberUPA802T
Description6-pin small MM high-frequency double transistor
ManufacturerNEC
UPA802T datasheet
 


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PRELIMINARY DATA SHEET
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
The PA802T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, V
• High Gain
2
|S
|
= 12 dB TYP. @ f = 1 GHz, V
21e
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2
ORDERING INFORMATION
PART NUMBER
QUANTITY
PA802T
Loose products
(50 PCS)
PA802T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note 110 mW must not be exceeded in 1 element.
The information in this document is subject to change without notice.
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
Printed in Japan
= 3 V, I
= 7 mA
CE
C
= 3 V, I
= 7 mA
CE
C
2SC4227)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
= 25 C)
A
SYMBOL
RATING
UNIT
V
20
V
CBO
V
10
V
CEO
V
1.5
V
EBO
I
65
mA
C
P
150 in 1 element
mW
T
Note
200 in 2 elements
T
150
˚C
j
T
–65 to +150
˚C
stg
SILICON TRANSISTOR
PA802T
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
6
5
4
Q
1
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
4. Emitter (Q2)
2. Emitter (Q1)
5. Base (Q2)
3. Collector (Q2)
6. Base (Q1)
©
1995