BFP182W

Manufacturer Part NumberBFP182W
DescriptionNPN silicon RF transistor
ManufacturerInfineon Technologies AG
BFP182W datasheets

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NPN Silicon RF Transistor*
For low noise, high-gain broadband amplifiers at
collector currents from 1 mA to 20 mA
f
= 8 GHz, F = 0.9 dB at 900 MHz
T
Pb-free (RoHS compliant) package
Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
BFP182W
RGs
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
2)
Total power dissipation
T
91 °C
S
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
3)
Junction - soldering point
1
Pb-containing package may be available upon special request
2
T S is measured on the collector lead at the soldering point to the pcb
3
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1)
Pin Configuration
1=E
2=C
3=E
4 = B -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
1
BFP182W
3
2
4
1
Package
-
SOT343
Value
Unit
12
V
20
20
2
35
mA
4
250
mW
150
°C
-65 ... 150
-65 ... 150
Value
Unit
K/W
235
2007-04-20

BFP182W Summary of contents