UPA1911TE NEC, UPA1911TE Datasheet
UPA1911TE
Manufacturer Part Number
UPA1911TE
Description
Manufacturer
NEC
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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
directly by a 2.5
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The
The PA1911 features a low on-state resistance and excellent
Can be driven by a 2.5
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 board, t
PA1911 is a switching device which can be driven
PA1911TE
D13455EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 115 m
= 120 m
= 190 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
-
V power source.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
-
V power source
GS
GS
GS
6-pin Mini Mold (Thin Type)
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
1 %
PACKAGE
5 sec.
The mark
A
D
D
D
= 25°C)
= –1.5 A)
= –1.5 A)
= –1.0A)
I
FOR SWITCHING
D(pulse)
V
V
I
D(DC)
P
P
T
T
DSS
GSS
stg
DATA SHEET
T1
T2
ch
shows major revised points.
–55 to +150
–12/+6
m
m
–20
150
MOS FIELD EFFECT TRANSISTOR
0.2
2
2.5
10
°C
°C
W
W
V
V
A
A
0.32
+0.1
–0.05
PACKAGE DRAWING (Unit : mm)
6
1
0.95
2.9 ±0.2
1.9
5
2
0.95
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Marking: TC
1, 2, 5, 6 : Drain
3
4
4
3
©
PA1911
: Gate
: Source
Source
Drain
0.9 to 1.1
0.65
Body
Diode
0.16
1998, 1999
0 to 0.1
+0.1
–0.06
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